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PDTB123ET by:

Small Signal Bipolar Transistor

Part Details for PDTB123ET by Nexperia

Overview of PDTB123ET by Nexperia

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Applications Consumer Electronics Audio and Video Systems

Part Details for PDTB123ET

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PDTB123ET Part Data Attributes

PDTB123ET Nexperia
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PDTB123ET Nexperia Small Signal Bipolar Transistor
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Reach Compliance Code compliant
ECCN Code EAR99
Date Of Intro 2017-02-01
Samacsys Manufacturer Nexperia
Additional Feature BUILT IN BIAS RESISTANCE RATIO IS 1
Collector Current-Max (IC) 0.5 A
Collector-Emitter Voltage-Max 50 V
Configuration SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE) 40
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type PNP
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PDTB123ET

This table gives cross-reference parts and alternative options found for PDTB123ET. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PDTB123ET, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
PDTB123ET,235 Small Signal Bipolar Transistor Nexperia PDTB123ET vs PDTB123ET,235
PDTB123ET,215 PDTB123ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm@en-us TO-236 3-Pin Nexperia PDTB123ET vs PDTB123ET,215
PDTB123ET,215 PDTB123ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3-Pin NXP Semiconductors PDTB123ET vs PDTB123ET,215
Part Number Description Manufacturer Compare
PDTB123ES TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123ES
PDTB123EK TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236, PLASTIC, SC-59A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123EK
PDTB123TT,215 PDTB123TT - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = open TO-236 3-Pin NXP Semiconductors PDTB123ET vs PDTB123TT,215
PDTB123TT,235 Small Signal Bipolar Transistor Nexperia PDTB123ET vs PDTB123TT,235
PDTB123TT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC, SMD, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123TT
PDTB123YT Small Signal Bipolar Transistor Nexperia PDTB123ET vs PDTB123YT
PDTB123ET,215 PDTB123ET - PNP 500 mA, 50 V resistor-equipped transistor; R1 = 2.2 kOhm, R2 = 2.2 kOhm TO-236 3-Pin NXP Semiconductors PDTB123ET vs PDTB123ET,215
PDTB123TS TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, PLASTIC, SC-43A, 3 PIN, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123TS
PDTB123YT TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123YT
PDTB123YT,235 TRANSISTOR 500 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB, PLASTIC PACKAGE-3, BIP General Purpose Small Signal NXP Semiconductors PDTB123ET vs PDTB123YT,235

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