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Transistors Power Field-Effect Transistors PHB110NQ08T,118

Transistors
PHB110NQ08T,118
Description: N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin

Overview of PHB110NQ08T,118 by Nexperia

Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Where used in Applications: Consumer Electronics Industrial Automation Energy and Power Systems Electronic Manufacturing Renewable Energy

Price & Stock for PHB110NQ08T,118 by Nexperia

Part # Manufacturer Description Stock Price Buy
DISTI # 29AK3505
Newark Mosfet Rohs Compliant: Yes |Nexperia PHB110NQ08T,118 RoHS: Compliant Min Qty: 4800 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 4,800 $1.4700
  • 9,600 $1.3900
  • 19,200 $1.2600
  • 28,800 $1.2100
  • 48,000 $1.1700
$1.1700 / $1.4700 Buy Now
DISTI # 1727-5266-1-ND
DigiKey MOSFET N-CH 75V 75A D2PAK Min Qty: 1 Lead time: 6 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) Temporarily Out of Stock
  • 1 $3.4400
  • 4,800 $1.1106
$1.1106 / $3.4400 Buy Now
DISTI # PHB110NQ08T,118
Avnet Americas Trans MOSFET N-CH 75V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB110NQ08T,118) RoHS: Compliant Min Qty: 313 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel 750 Partner Stock
  • 313 $1.1436
  • 320 $1.1196
  • 630 $1.0876
  • 1,600 $1.0716
  • 3,200 $1.0476
  • 16,000 $1.0236
  • 32,000 $0.9916
$0.9916 / $1.1436 Buy Now
DISTI # PHB110NQ08T,118
Avnet Americas Trans MOSFET N-CH 75V 75A 3-Pin(2+Tab) D2PAK T/R - Tape and Reel (Alt: PHB110NQ08T,118) RoHS: Compliant Min Qty: 4800 Package Multiple: 800 Lead time: 6 Weeks, 0 Days Container: Reel 0
  • 4,800 $1.0324
$1.0324 Buy Now
DISTI # 771-PHB110NQ08T118
Mouser Electronics MOSFETs PHB110NQ08T/SOT404/D2PAK RoHS: Compliant 0
  • 800 $1.1100
  • 4,800 $1.1100
$1.1100 Order Now
DISTI # PHB110NQ08T,118
Avnet Silica (Alt: PHB110NQ08T,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days Silica - 0
Buy Now
DISTI # PHB110NQ08T,118
EBV Elektronik (Alt: PHB110NQ08T,118) RoHS: Compliant Min Qty: 800 Package Multiple: 800 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now

CAD Models for PHB110NQ08T,118 by Nexperia
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Part Data Attributes for PHB110NQ08T,118 by Nexperia
Parametric Data

PHB110NQ08T,118
Nexperia
Buy Now
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
NEXPERIA
Part Package Code
D2PAK
Package Description
D2PAK-3
Pin Count
3
Manufacturer Package Code
SOT404
Reach Compliance Code
not_compliant
ECCN Code
EAR99
Date Of Intro
2017-02-01
Samacsys Manufacturer
Nexperia
Additional Feature
LOGIC LEVEL COMPATIBLE
Avalanche Energy Rating (Eas)
560 mJ
Case Connection
DRAIN
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
75 V
Drain Current-Max (ID)
75 A
Drain-source On Resistance-Max
0.009 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PSSO-G2
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
2
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
245
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
440 A
Surface Mount
YES
Terminal Finish
TIN
Terminal Form
GULL WING
Terminal Position
SINGLE
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. PHB110NQ08T,118
    Nexperia
    N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin
    VS

Alternate Parts for PHB110NQ08T,118

This table gives cross-reference parts and alternative options found for PHB110NQ08T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB110NQ08T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
BUK769R6-80E Power Field-Effect Transistor Nexperia PHB110NQ08T,118 vs BUK769R6-80E
BUK7609-75A Power Field-Effect Transistor Nexperia PHB110NQ08T,118 vs BUK7609-75A
PHB110NQ08T,118 N-channel TrenchMOS standard level FET D2PAK 3-Pin NXP Semiconductors PHB110NQ08T,118 vs PHB110NQ08T,118
BUK7609-75A,118 N-channel TrenchMOS standard level FET@en-us D2PAK 3-Pin Nexperia PHB110NQ08T,118 vs BUK7609-75A,118
934058279127 Power Field-Effect Transistor Nexperia PHB110NQ08T,118 vs 934058279127
934066648118 75A, 80V, 0.0096ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, D2PAK-3/2 Nexperia PHB110NQ08T,118 vs 934066648118
Part Number Description Manufacturer Compare
AUIRFS3607TRL Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, ROHS COMPLIANT, PLASTIC, D2PAK-3 Infineon Technologies AG PHB110NQ08T,118 vs AUIRFS3607TRL
IRFSL3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN Infineon Technologies AG PHB110NQ08T,118 vs IRFSL3607PBF
IRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, PLASTIC, TO-262, 3 PIN Infineon Technologies AG PHB110NQ08T,118 vs IRFSL3607
AUIRFR3607TRL Power Field-Effect Transistor, 56A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, DPAK-3 Infineon Technologies AG PHB110NQ08T,118 vs AUIRFR3607TRL
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN Infineon Technologies AG PHB110NQ08T,118 vs AUIRFSL3607
IRFU3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251AA, LEAD FREE, PLASTIC, IPAK-3 Infineon Technologies AG PHB110NQ08T,118 vs IRFU3607PBF
IRFB3607PBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-Oxide Semiconductor FET, TO-220AB, LEAD FREE, PLASTIC PACKAGE-3 Infineon Technologies AG PHB110NQ08T,118 vs IRFB3607PBF
IRFR3607TRRPBF Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 Infineon Technologies AG PHB110NQ08T,118 vs IRFR3607TRRPBF
AUIRFSL3607 Power Field-Effect Transistor, 80A I(D), 75V, 0.009ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, ROHS COMPLIANT, PLASTIC, TO-262, 3 PIN International Rectifier PHB110NQ08T,118 vs AUIRFSL3607
IRFSL3507PBF Power Field-Effect Transistor, 75A I(D), 75V, 0.0088ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, LEAD FREE, PLASTIC, TO-262, 3 PIN International Rectifier PHB110NQ08T,118 vs IRFSL3507PBF

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