Part Details for PHB20N06T,118 by NXP Semiconductors
Overview of PHB20N06T,118 by NXP Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Telecommunications
Price & Stock for PHB20N06T,118
Part # | Distributor | Description | Stock | Price | Buy | |
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Rochester Electronics | PHB20N06T - 20.3A, 55V, 0.075ohm, N-Channel Power MOSFET, D2PAK ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 628 |
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$0.3331 / $0.3919 | Buy Now |
Part Details for PHB20N06T,118
PHB20N06T,118 CAD Models
PHB20N06T,118 Part Data Attributes
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PHB20N06T,118
NXP Semiconductors
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Datasheet
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Compare Parts:
PHB20N06T,118
NXP Semiconductors
N-channel TrenchMOS standard level FET D2PAK 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Part Package Code | D2PAK | |
Package Description | PLASTIC, D2PAK-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.75 | |
Factory Lead Time | 4 Weeks | |
Avalanche Energy Rating (Eas) | 30.3 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 55 V | |
Drain Current-Max (ID) | 20.3 A | |
Drain-source On Resistance-Max | 0.075 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 245 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 62 W | |
Pulsed Drain Current-Max (IDM) | 81 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for PHB20N06T,118
This table gives cross-reference parts and alternative options found for PHB20N06T,118. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PHB20N06T,118, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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HUF75329D3S | 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | PHB20N06T,118 vs HUF75329D3S |
HUFA75321D3ST | Power Field-Effect Transistor, 20A I(D), 55V, 0.036ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | PHB20N06T,118 vs HUFA75321D3ST |
HUFA75309P3 | 19A, 55V, 0.07ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB | Rochester Electronics LLC | PHB20N06T,118 vs HUFA75309P3 |
IRFZ24N | Power Field-Effect Transistor, 17A I(D), 55V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN | International Rectifier | PHB20N06T,118 vs IRFZ24N |
FDB045AN08A0 | Power Field-Effect Transistor, 19A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN | Fairchild Semiconductor Corporation | PHB20N06T,118 vs FDB045AN08A0 |
HUFA76409D3S | 18A, 60V, 0.075ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | PHB20N06T,118 vs HUFA76409D3S |
IRFR1205PBF | Power Field-Effect Transistor, 20A I(D), 55V, 0.027ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, LEAD FREE, PLASTIC, DPAK-3 | International Rectifier | PHB20N06T,118 vs IRFR1205PBF |
HUFA76419D3S | 20A, 60V, 0.043ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Rochester Electronics LLC | PHB20N06T,118 vs HUFA76419D3S |
934056258127 | TRANSISTOR 20 A, 55 V, 0.081 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN, FET General Purpose Power | NXP Semiconductors | PHB20N06T,118 vs 934056258127 |
HUF75329D3ST | 20A, 55V, 0.026ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | PHB20N06T,118 vs HUF75329D3ST |