Part Details for PHD34NQ10T by Philips Semiconductors
Overview of PHD34NQ10T by Philips Semiconductors
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Price & Stock for PHD34NQ10T
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
Quest Components | 1960 |
|
$1.1000 / $4.0000 | Buy Now |
Part Details for PHD34NQ10T
PHD34NQ10T CAD Models
PHD34NQ10T Part Data Attributes:
|
PHD34NQ10T
Philips Semiconductors
Buy Now
Datasheet
|
Compare Parts:
PHD34NQ10T
Philips Semiconductors
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | PHILIPS SEMICONDUCTORS | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Configuration | SINGLE | |
Drain Current-Max (ID) | 35 A | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 136 W | |
Surface Mount | YES |