Parametric results for: PHD34NQ10T under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

170.0 mJ 4

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

100 V 4

5 hits Apply

Drain Current-Max (ID) (1)

35 A 5

5 hits Apply

Drain-source On Resistance-Max (1)

40 mΩ 4

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252 2

5 hits Apply

R-PSSO-G2 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (3)

Nexperia 2 NXP Semiconductors 2 Philips Semiconductors 1

5 hits Apply

1 5

5 hits Apply

Number of Elements (1)

1 5

5 hits Apply

Number of Terminals (1)

2 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

175.0 °C 4

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 1 Obsolete 2 Transferred 2

5 hits Apply

260 3

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

136 W 4

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply