Part Details for PMDXB600UNE by NXP Semiconductors
Overview of PMDXB600UNE by NXP Semiconductors
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Price & Stock for PMDXB600UNE
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ComSIT USA | 20 V DUAL N-CHANNEL TRENCH MOSFET Small Signal Field-Effect Transistor, 0.6A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 5000 |
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Part Details for PMDXB600UNE
PMDXB600UNE CAD Models
PMDXB600UNE Part Data Attributes
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PMDXB600UNE
NXP Semiconductors
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Datasheet
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PMDXB600UNE
NXP Semiconductors
600mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, 1.10 X 1 MM, 0.37 MM HEIGHT, LEADLESS, ULTRA SMALL, ULTRA THIN, PLASTIC, DFN1010B-6, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | NXP SEMICONDUCTORS | |
| Package Description | SMALL OUTLINE, R-PDSO-N6 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 0.6 A | |
| Drain-source On Resistance-Max | 0.62 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Reference Standard | IEC-60134 | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |