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PMEG6030ETP by:

RECTIFIER DIODE

Part Details for PMEG6030ETP by NXP Semiconductors

Overview of PMEG6030ETP by NXP Semiconductors

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Part Details for PMEG6030ETP

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PMEG6030ETP Part Data Attributes

PMEG6030ETP NXP Semiconductors
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PMEG6030ETP NXP Semiconductors RECTIFIER DIODE
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer NXP SEMICONDUCTORS
Package Description PLASTIC PACKAGE-2
Reach Compliance Code unknown
ECCN Code EAR99
HTS Code 8541.10.00.80
Samacsys Manufacturer NXP
Application EFFICIENCY
Configuration SINGLE
Diode Element Material SILICON
Diode Type RECTIFIER DIODE
Forward Voltage-Max (VF) 0.53 V
JESD-30 Code R-PDSO-F2
Moisture Sensitivity Level 1
Non-rep Pk Forward Current-Max 50 A
Number of Elements 1
Number of Phases 1
Number of Terminals 2
Operating Temperature-Max 175 °C
Operating Temperature-Min -55 °C
Output Current-Max 4.2 A
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Power Dissipation-Max 0.75 W
Reference Standard AEC-Q101; IEC-60134
Rep Pk Reverse Voltage-Max 60 V
Reverse Current-Max 200 µA
Reverse Recovery Time-Max 0.012 µs
Surface Mount YES
Technology SCHOTTKY
Terminal Finish Pure Tin (Sn)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED

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