Part Details for PMEG6030ETP by NXP Semiconductors
Overview of PMEG6030ETP by NXP Semiconductors
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- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for PMEG6030ETP
PMEG6030ETP CAD Models
PMEG6030ETP Part Data Attributes
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PMEG6030ETP
NXP Semiconductors
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Datasheet
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PMEG6030ETP
NXP Semiconductors
RECTIFIER DIODE
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | NXP SEMICONDUCTORS | |
Package Description | PLASTIC PACKAGE-2 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
HTS Code | 8541.10.00.80 | |
Samacsys Manufacturer | NXP | |
Application | EFFICIENCY | |
Configuration | SINGLE | |
Diode Element Material | SILICON | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 0.53 V | |
JESD-30 Code | R-PDSO-F2 | |
Moisture Sensitivity Level | 1 | |
Non-rep Pk Forward Current-Max | 50 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 4.2 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Power Dissipation-Max | 0.75 W | |
Reference Standard | AEC-Q101; IEC-60134 | |
Rep Pk Reverse Voltage-Max | 60 V | |
Reverse Current-Max | 200 µA | |
Reverse Recovery Time-Max | 0.012 µs | |
Surface Mount | YES | |
Technology | SCHOTTKY | |
Terminal Finish | Pure Tin (Sn) | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |