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PMV16UN - 20 V, 5.8 A N-channel Trench MOSFET@en-us TO-236 3-Pin
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PMV16UN,215
Nexperia
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PMV16UN,215
Nexperia
PMV16UN - 20 V, 5.8 A N-channel Trench MOSFET@en-us TO-236 3-Pin
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | TO-236 | |
Package Description | PLASTIC PACKAGE-3 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT23 | |
Reach Compliance Code | compliant | |
Date Of Intro | 2017-02-01 | |
Samacsys Manufacturer | Nexperia | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 5.8 A | |
Drain-source On Resistance-Max | 0.018 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |