Part Details for PMZ950UPE by Nexperia
Overview of PMZ950UPE by Nexperia
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for PMZ950UPE
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
37AJ0539
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Newark | Mosfet, P-Ch, -20V, -0.5A, Sot-883-3, Transistor Polarity:P Channel, Continuous Drain Current Id:-500Ma, Drain Source Voltage Vds:-20V, On Resistance Rds(On):1.02Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-700Mv, Rohs Compliant: Yes |Nexperia PMZ950UPE RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.0750 / $0.3720 | Buy Now |
Part Details for PMZ950UPE
PMZ950UPE CAD Models
PMZ950UPE Part Data Attributes
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PMZ950UPE
Nexperia
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Datasheet
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PMZ950UPE
Nexperia
Small Signal Field-Effect Transistor
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Package Description | DFN1006-3, 3 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-02-18 | |
Samacsys Manufacturer | Nexperia | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 0.5 A | |
Drain-source On Resistance-Max | 1.4 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PBCC-N3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | CHIP CARRIER | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | NO LEAD | |
Terminal Position | BOTTOM | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |