Part Details for PSMN1R2-25YL by Nexperia
Overview of PSMN1R2-25YL by Nexperia
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (2 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for PSMN1R2-25YL
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | Min Qty: 5 | 125 |
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$0.4641 / $1.2375 | Buy Now |
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DISTI #
1785634
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Farnell | MOSFET, N CH, 25V, 100A, SOT669 RoHS: Compliant Min Qty: 1 Lead time: 14 Weeks, 1 Days Container: Each | 0 |
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$1.7452 / $2.7747 | Buy Now |
Part Details for PSMN1R2-25YL
PSMN1R2-25YL CAD Models
PSMN1R2-25YL Part Data Attributes:
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PSMN1R2-25YL
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN1R2-25YL
Nexperia
Power Field-Effect Transistor, 100A I(D), 25V, 0.00185ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | NEXPERIA | |
| Package Description | LFPAK-4 | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Nexperia | |
| Avalanche Energy Rating (Eas) | 677 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 100 A | |
| Drain-source On Resistance-Max | 0.00185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSSO-G4 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 815 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for PSMN1R2-25YL
This table gives cross-reference parts and alternative options found for PSMN1R2-25YL. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN1R2-25YL, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| PSMN1R2-25YL,115 | PSMN1R2-25YL - N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK@en-us SOIC 4-Pin | Nexperia | PSMN1R2-25YL vs PSMN1R2-25YL,115 |
| PSMN1R2-25YL | TRANSISTOR 100 A, 25 V, 0.00185 ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, PLASTIC, LFPAK-4, FET General Purpose Power | NXP Semiconductors | PSMN1R2-25YL vs PSMN1R2-25YL |