Part Details for PSMN3R9-60PS by Nexperia
Overview of PSMN3R9-60PS by Nexperia
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Applications
Energy and Power Systems
Medical Imaging
Robotics and Drones
Part Details for PSMN3R9-60PS
PSMN3R9-60PS CAD Models
PSMN3R9-60PS Part Data Attributes
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PSMN3R9-60PS
Nexperia
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Datasheet
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PSMN3R9-60PS
Nexperia
Power Field-Effect Transistor, 130A I(D), 60V, 0.0039ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | NEXPERIA | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 283 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 130 A | |
Drain-source On Resistance-Max | 0.0039 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 705 A | |
Reference Standard | IEC-60134 | |
Surface Mount | NO | |
Terminal Finish | TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |