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Transistors / Power Field-Effect Transistors / PSMN4R0-60YS,115
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PSMN4R0-60YS,115 by: Nexperia

PSMN4R0-60YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FET@en-us SOIC 4-Pin

Part Details for PSMN4R0-60YS,115 by Nexperia

Overview of PSMN4R0-60YS,115 by Nexperia

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for PSMN4R0-60YS,115

Part # Distributor Description Stock Price Buy
DISTI # 29AK4098
Newark Mosfet Rohs Compliant: Yes |Nexperia PSMN4R0-60YS,115 Min Qty: 1500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1,500 $0.9640
  • 3,000 $0.9130
  • 6,000 $0.8240
  • 9,000 $0.7900
  • 15,000 $0.7630
$0.7630 / $0.9640 Buy Now
DISTI # 1727-2470-1-ND
DigiKey MOSFET N-CH 60V 74A LFPAK56 Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 7195
In Stock
  • 1 $1.7300
  • 10 $1.4340
  • 100 $1.1417
  • 500 $0.9661
  • 1,500 $0.8197
  • 3,000 $0.7787
  • 7,500 $0.7494
  • 10,500 $0.7246
$0.7246 / $1.7300 Buy Now
DISTI # PSMN4R0-60YS,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R - Tape and Reel (Alt: PSMN4R0-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7684
  • 3,000 $0.7477
  • 6,000 $0.7269
  • 9,000 $0.7061
  • 12,000 $0.6853
  • 15,000 $0.6646
  • 150,000 $0.6438
$0.6438 / $0.7684 Buy Now
DISTI # 771-PSMN4R0-60YS,115
Mouser Electronics MOSFET PSMN4R0-60YS/SOT669/LFPAK RoHS: Compliant 29107
  • 1 $1.7200
  • 10 $1.4300
  • 100 $1.1400
  • 250 $1.0500
  • 500 $0.9520
  • 1,000 $0.7800
  • 1,500 $0.7320
  • 3,000 $0.7210
  • 9,000 $0.7100
$0.7100 / $1.7200 Buy Now
Future Electronics PSMN4R0 Series 60 V 74 A 4 mOhm N-Channel Standard Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.7000
  • 3,000 $0.6850
  • 4,500 $0.6750
  • 6,000 $0.6700
  • 7,500 $0.6500
$0.6500 / $0.7000 Buy Now
Future Electronics PSMN4R0 Series 60 V 74 A 4 mOhm N-Channel Standard Level MOSFET - LFPAK-56 RoHS: Compliant pbFree: Yes Min Qty: 1500 Package Multiple: 1500 Container: Reel 0
Reel
  • 1,500 $0.7000
  • 3,000 $0.6850
  • 4,500 $0.6750
  • 6,000 $0.6700
  • 7,500 $0.6500
$0.6500 / $0.7000 Buy Now
DISTI # PSMN4R0-60YS,115
Avnet Americas Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R - Tape and Reel (Alt: PSMN4R0-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days Container: Reel 0
  • 1,500 $0.7684
  • 3,000 $0.7477
  • 6,000 $0.7269
  • 9,000 $0.7061
  • 12,000 $0.6853
  • 15,000 $0.6646
  • 150,000 $0.6438
$0.6438 / $0.7684 Buy Now
DISTI # PSMN4R0-60YS.115
TME Transistor: N-MOSFET, unipolar, 60V, 100A, Idm: 418A, 130W Min Qty: 1 0
  • 1 $1.5900
  • 5 $1.4400
  • 25 $1.2700
  • 100 $1.1500
  • 500 $1.0700
$1.0700 / $1.5900 RFQ
DISTI # PSMN4R0-60YS,115
Avnet Asia Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: PSMN4R0-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 13 Weeks, 0 Days 0
  • 1,500 $0.7417
  • 3,000 $0.6923
  • 4,500 $0.6743
  • 7,500 $0.6572
  • 15,000 $0.6410
  • 37,500 $0.6255
  • 75,000 $0.6108
$0.6108 / $0.7417 Buy Now
DISTI # PSMN4R0-60YS,115
Avnet Silica Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: PSMN4R0-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 2 Weeks, 1 Days Silica - 0
Buy Now
Chip1Cloud MOSFET N-CH 60V 74A LFPAK56 64676
RFQ
DISTI # PSMN4R0-60YS,115
EBV Elektronik Trans MOSFET N-CH 60V 100A 5-Pin LFPAK56 T/R (Alt: PSMN4R0-60YS,115) RoHS: Compliant Min Qty: 1500 Package Multiple: 1500 Lead time: 2 Weeks, 1 Days EBV - 0
Buy Now
DISTI # 3940843
Farnell MOSFET RoHS: Compliant Min Qty: 1500 Lead time: 14 Weeks, 1 Days Container: Reel 0
  • 1,500 $0.7712
$0.7712 Buy Now

Part Details for PSMN4R0-60YS,115

PSMN4R0-60YS,115 CAD Models

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PSMN4R0-60YS,115 Part Data Attributes:

Parametric Data
PSMN4R0-60YS,115 Nexperia
Buy Now Datasheet
Compare Parts:
PSMN4R0-60YS,115 Nexperia PSMN4R0-60YS - N-channel LFPAK 60 V, 4.0 mΩ standard level FET@en-us SOIC 4-Pin
Part Life Cycle Code Active
Ihs Manufacturer NEXPERIA
Part Package Code SOIC
Package Description SMALL OUTLINE, R-PSSO-G4
Pin Count 4
Manufacturer Package Code SOT669
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Nexperia
Avalanche Energy Rating (Eas) 170 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 63 V
Drain Current-Max (ID) 100 A
Drain-source On Resistance-Max 0.004 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-235
JESD-30 Code R-PSSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 418 A
Reference Standard IEC-60134
Surface Mount YES
Terminal Finish TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for PSMN4R0-60YS,115

This table gives cross-reference parts and alternative options found for PSMN4R0-60YS,115. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN4R0-60YS,115, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
IPB048N06LG Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN4R0-60YS,115 vs IPB048N06LG
PSMN4R1-60YLX PSMN4R1-60YL - N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56@en-us SOIC 4-Pin Nexperia PSMN4R0-60YS,115 vs PSMN4R1-60YLX
IPB100N06S304ATMA1 Power Field-Effect Transistor, 100A I(D), 55V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN Infineon Technologies AG PSMN4R0-60YS,115 vs IPB100N06S304ATMA1
IPB048N06LGATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0044ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN4R0-60YS,115 vs IPB048N06LGATMA1
IPD048N06L3G Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG PSMN4R0-60YS,115 vs IPD048N06L3G
IPB050N06NGATMA1 Power Field-Effect Transistor, 100A I(D), 60V, 0.0047ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, D2PAK-3 Infineon Technologies AG PSMN4R0-60YS,115 vs IPB050N06NGATMA1
IPD048N06L3GXT Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG PSMN4R0-60YS,115 vs IPD048N06L3GXT
934066471127 100A, 60V, 0.0046ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, PLASTIC, SC-46, 3 PIN NXP Semiconductors PSMN4R0-60YS,115 vs 934066471127
934069893115 Power Field-Effect Transistor, 100A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-235 Nexperia PSMN4R0-60YS,115 vs 934069893115
IPD048N06L3GBTMA1 Power Field-Effect Transistor, 90A I(D), 60V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, GREEN, PLASTIC, TO-252, 3 PIN Infineon Technologies AG PSMN4R0-60YS,115 vs IPD048N06L3GBTMA1

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