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PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
55W5044
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Newark | Mosfet, N-Ch, 100V, 120A, To-263, Channel Type:N Channel, Drain Source Voltage Vds:100V, Continuous Drain Current Id:120A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Nexperia PSMN4R8-100BSEJ Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 23406 |
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$3.0300 / $4.5300 | Buy Now |
DISTI #
1727-1103-1-ND
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DigiKey | MOSFET N-CH 100V 120A D2PAK Min Qty: 1 Lead time: 13 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
10441 In Stock |
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$2.0597 / $4.2300 | Buy Now |
DISTI #
PSMN4R8-100BSEJ
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Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin D2PAK T/R - Tape and Reel (Alt: PSMN4R8-100BSEJ) RoHS: Not Compliant Min Qty: 800 Package Multiple: 800 Lead time: 13 Weeks, 0 Days Container: Reel | 27200 |
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$1.7628 / $2.1040 | Buy Now |
DISTI #
PSMN4R8-100BSEJ
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Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin D2PAK T/R - Tape and Reel (Alt: PSMN4R8-100BSEJ) Min Qty: 4800 Lead time: 6 Weeks, 0 Days Container: Reel | 0 |
|
$0.0989 | Buy Now |
DISTI #
PSMN4R8-100BSEJ
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Avnet Americas | Trans MOSFET N-CH 100V 120A 3-Pin D2PAK T/R - Tape and Reel (Alt: PSMN4R8-100BSEJ) Min Qty: 4800 Package Multiple: 1 Lead time: 13 Weeks, 0 Days Container: Reel | 0 |
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$1.7628 / $2.1040 | Buy Now |
DISTI #
771-PSMN4R8-100BSEJ
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Mouser Electronics | MOSFET PSMN4R8-100BSE/SOT404/D2PAK RoHS: Compliant | 15773 |
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$2.0000 / $3.7800 | Buy Now |
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Future Electronics | PSMN4R8 Series 100 V 4.8 mOhm 278 nC N-Channel Standard Level Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 800 Package Multiple: 800 Container: Reel | 2400Reel |
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$1.9600 / $2.0200 | Buy Now |
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Future Electronics | PSMN4R8 Series 100 V 4.8 mOhm 278 nC N-Channel Standard Level Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 4800 Package Multiple: 800 Container: Reel | 0Reel |
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$1.9600 / $2.0200 | Buy Now |
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Future Electronics | PSMN4R8 Series 100 V 4.8 mOhm 278 nC N-Channel Standard Level Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 800 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
|
$1.9600 / $2.3500 | Buy Now |
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Future Electronics | PSMN4R8 Series 100 V 4.8 mOhm 278 nC N-Channel Standard Level Mosfet - D2PAK RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 1 Container: Bulk | 0Bulk |
|
$1.9600 / $2.2300 | Buy Now |
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PSMN4R8-100BSEJ
Nexperia
Buy Now
Datasheet
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Compare Parts:
PSMN4R8-100BSEJ
Nexperia
PSMN4R8-100BSE - N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK@en-us D2PAK 3-Pin
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Part Life Cycle Code | Active | |
Ihs Manufacturer | NEXPERIA | |
Part Package Code | D2PAK | |
Package Description | D2PAK-3/2 | |
Pin Count | 3 | |
Manufacturer Package Code | SOT404 | |
Reach Compliance Code | not_compliant | |
Factory Lead Time | 6 Weeks | |
Samacsys Manufacturer | Nexperia | |
Avalanche Energy Rating (Eas) | 542 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 100 V | |
Drain Current-Max (ID) | 120 A | |
Drain-source On Resistance-Max | 0.0048 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 643 pF | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 405 W | |
Pulsed Drain Current-Max (IDM) | 707 A | |
Reference Standard | IEC-60134 | |
Surface Mount | YES | |
Terminal Finish | TIN | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 294 ns | |
Turn-on Time-Max (ton) | 159 ns |
This table gives cross-reference parts and alternative options found for PSMN4R8-100BSEJ. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of PSMN4R8-100BSEJ, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
IPB120N10S4-05 | Power Field-Effect Transistor | Infineon Technologies AG | PSMN4R8-100BSEJ vs IPB120N10S4-05 |
PSMN4R8-100PSE | Power Field-Effect Transistor | Nexperia | PSMN4R8-100BSEJ vs PSMN4R8-100PSE |
IRFB4110GPBF | Power Field-Effect Transistor, 120A I(D), 100V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, HALOGEN AND LEAD FREE, PLASTIC PACKAGE-3 | Infineon Technologies AG | PSMN4R8-100BSEJ vs IRFB4110GPBF |
IPP120N10S4-05 | Power Field-Effect Transistor | Infineon Technologies AG | PSMN4R8-100BSEJ vs IPP120N10S4-05 |
PSMN4R8-100BSE | Power Field-Effect Transistor, 120A I(D), 100V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Nexperia | PSMN4R8-100BSEJ vs PSMN4R8-100BSE |
PSMN4R8-100PSEQ | PSMN4R8-100PSE - N-channel 100 V 5 mΩ standard level MOSFET with improved SOA in TO220 package@en-us TO-220 3-Pin | Nexperia | PSMN4R8-100BSEJ vs PSMN4R8-100PSEQ |