Part Details for Q67040-S4491 by Infineon Technologies AG
Overview of Q67040-S4491 by Infineon Technologies AG
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- Number of Functional Equivalents:
- Part Data Attributes
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Part Details for Q67040-S4491
Q67040-S4491 CAD Models
Q67040-S4491 Part Data Attributes
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Q67040-S4491
Infineon Technologies AG
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Datasheet
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Q67040-S4491
Infineon Technologies AG
Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, GREEN, PLASTIC PACKAGE-3
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Additional Feature | AVALANCHE RATED | |
| Avalanche Energy Rating (Eas) | 1800 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 415 W | |
| Pulsed Drain Current-Max (IDM) | 141 A | |
| Surface Mount | NO | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Element Material | SILICON |
Alternate Parts for Q67040-S4491
This table gives cross-reference parts and alternative options found for Q67040-S4491. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of Q67040-S4491, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG44N65EF-GE3 | Power Field-Effect Transistor, 46A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | Q67040-S4491 vs SIHG44N65EF-GE3 |
| SIHW47N60EF-GE3 | Power Field-Effect Transistor, 47A I(D), 600V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | Q67040-S4491 vs SIHW47N60EF-GE3 |
| R6047KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | Q67040-S4491 vs R6047KNZ4C13 |
| R6047ENZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | Q67040-S4491 vs R6047ENZ4C13 |
| SPW47N60C3FKSA1 | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | Q67040-S4491 vs SPW47N60C3FKSA1 |
| STW54NM65ND | N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package | STMicroelectronics | Q67040-S4491 vs STW54NM65ND |
| STW54NM65N | 50A, 650V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | Q67040-S4491 vs STW54NM65N |
| SPW47N65C3FKSA1 | Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Infineon Technologies AG | Q67040-S4491 vs SPW47N65C3FKSA1 |
| SIHW47N65E-GE3 | Power Field-Effect Transistor, 47A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | Q67040-S4491 vs SIHW47N65E-GE3 |