Datasheets
RF1S70N06SM9A by:

Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN

Part Details for RF1S70N06SM9A by Fairchild Semiconductor Corporation

Overview of RF1S70N06SM9A by Fairchild Semiconductor Corporation

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Price & Stock for RF1S70N06SM9A

Part # Distributor Description Stock Price Buy
DISTI # 2156-RF1S70N06SM9A-ND
DigiKey N-CHANNEL POWER MOSFET Min Qty: 123 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT 1600
In Stock
  • 123 $2.4500
$2.4500 Buy Now
Bristol Electronics   73
RFQ
Quest Components   58
  • 1 $7.1070
  • 15 $4.7380
  • 54 $4.3827
$4.3827 / $7.1070 Buy Now
Rochester Electronics 70A, 60V, 0.014ohm, N-Channel Power MOSFET, TO-263AB ' RoHS: Not Compliant Status: Obsolete Min Qty: 1 1600
  • 1 $2.4800
  • 25 $2.4300
  • 100 $2.3300
  • 500 $2.2300
  • 1,000 $2.1100
$2.1100 / $2.4800 Buy Now

Part Details for RF1S70N06SM9A

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RF1S70N06SM9A Part Data Attributes:

RF1S70N06SM9A Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
RF1S70N06SM9A Fairchild Semiconductor Corporation Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code D2PAK
Package Description TO-263AB, 3 PIN
Pin Count 4
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 70 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-263AB
JESD-30 Code R-PSSO-G2
JESD-609 Code e0
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 150 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for RF1S70N06SM9A

This table gives cross-reference parts and alternative options found for RF1S70N06SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RF1S70N06SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
RF1S70N06SM Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation RF1S70N06SM9A vs RF1S70N06SM
RF1S70N06SM9A 70A, 80V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, TO-263AB, 3 PIN Intersil Corporation RF1S70N06SM9A vs RF1S70N06SM9A
RF1S70N06SM 70A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RF1S70N06SM9A vs RF1S70N06SM
RF1S70N06SM9A Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor RF1S70N06SM9A vs RF1S70N06SM9A
Part Number Description Manufacturer Compare
RF1S70N06SM 70A, 60V, 0.014ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB Intersil Corporation RF1S70N06SM9A vs RF1S70N06SM
RF1S70N06SM Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, TO-263AB, 3 PIN Fairchild Semiconductor Corporation RF1S70N06SM9A vs RF1S70N06SM
RF1S70N06SM9A Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB Harris Semiconductor RF1S70N06SM9A vs RF1S70N06SM9A

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