Part Details for RFD14N05SM9A by Fairchild Semiconductor Corporation
Overview of RFD14N05SM9A by Fairchild Semiconductor Corporation
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for RFD14N05SM9A
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1056 |
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Bristol Electronics | Min Qty: 7 | 435 |
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$0.2400 / $0.7500 | Buy Now |
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Quest Components | 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 324 |
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$0.3250 / $0.6500 | Buy Now |
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Quest Components | 14 A, 50 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | 348 |
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$0.3000 / $1.0000 | Buy Now |
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Chip1Cloud | MOSFET N-CH 50V 14A DPAK | 12173 |
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Perfect Parts Corporation | 33432 |
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RFQ |
Part Details for RFD14N05SM9A
RFD14N05SM9A CAD Models
RFD14N05SM9A Part Data Attributes
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RFD14N05SM9A
Fairchild Semiconductor Corporation
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Datasheet
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RFD14N05SM9A
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | DPAK | |
| Package Description | TO-252AA, 3 PIN | |
| Pin Count | 3 | |
| Manufacturer Package Code | TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 50 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252AA | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 48 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for RFD14N05SM9A
This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MTD3055E | 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | Texas Instruments | RFD14N05SM9A vs MTD3055E |
| RFD14N05SM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Intersil Corporation | RFD14N05SM9A vs RFD14N05SM |
| RFD14N05SM9A | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA | Intersil Corporation | RFD14N05SM9A vs RFD14N05SM9A |
| RFD14N05SM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | RFD14N05SM9A vs RFD14N05SM |
| SMD15N05 | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Temic Semiconductors | RFD14N05SM9A vs SMD15N05 |
| RFD14N05SM9A | Power Field-Effect Transistor, | Rochester Electronics LLC | RFD14N05SM9A vs RFD14N05SM9A |
| 2SK2018-01S | Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN | Fuji Electric Co Ltd | RFD14N05SM9A vs 2SK2018-01S |
| SSR3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | RFD14N05SM9A vs SSR3055 |
| MTD8N06E | 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | Motorola Mobility LLC | RFD14N05SM9A vs MTD8N06E |
| RFD14N05SM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05SM9A vs RFD14N05SM |