Datasheets
RFD14N05SM9A by:

14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA

Part Details for RFD14N05SM9A by Intersil Corporation

Overview of RFD14N05SM9A by Intersil Corporation

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Applications Space Technology Aerospace and Defense Energy and Power Systems

Price & Stock for RFD14N05SM9A

Part # Distributor Description Stock Price Buy
Bristol Electronics   8662
RFQ

Part Details for RFD14N05SM9A

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RFD14N05SM9A Part Data Attributes

RFD14N05SM9A Intersil Corporation
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RFD14N05SM9A Intersil Corporation 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer INTERSIL CORP
Part Package Code TO-252AA
Package Description TO-252AA, 3 PIN
Pin Count 4
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Additional Feature AVALANCHE RATED
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 50 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.1 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252AA
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 48 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 100 ns
Turn-on Time-Max (ton) 60 ns

Alternate Parts for RFD14N05SM9A

This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Texas Instruments RFD14N05SM9A vs MTD3055E
RFD14N05SM 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Intersil Corporation RFD14N05SM9A vs RFD14N05SM
RFD14N05SM 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC RFD14N05SM9A vs RFD14N05SM
SMD15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Temic Semiconductors RFD14N05SM9A vs SMD15N05
RFD14N05SM9A Power Field-Effect Transistor, Rochester Electronics LLC RFD14N05SM9A vs RFD14N05SM9A
2SK2018-01S Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN Fuji Electric Co Ltd RFD14N05SM9A vs 2SK2018-01S
SSR3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor RFD14N05SM9A vs SSR3055
MTD8N06E 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 Motorola Mobility LLC RFD14N05SM9A vs MTD8N06E
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation RFD14N05SM9A vs RFD14N05SM
RFD14N05SM9A_NL 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN Rochester Electronics LLC RFD14N05SM9A vs RFD14N05SM9A_NL
Part Number Description Manufacturer Compare
SSR3055 Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Samsung Semiconductor RFD14N05SM9A vs SSR3055
RFD14N05SM Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation RFD14N05SM9A vs RFD14N05SM
2SK2018-01S Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN Fuji Electric Co Ltd RFD14N05SM9A vs 2SK2018-01S
SMD15N05 Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, Temic Semiconductors RFD14N05SM9A vs SMD15N05
RFD14N05SM9A Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Harris Semiconductor RFD14N05SM9A vs RFD14N05SM9A
MTD3055E 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 Texas Instruments RFD14N05SM9A vs MTD3055E
RFD14N05SM9A Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation RFD14N05SM9A vs RFD14N05SM9A
RFD14N05SM9A_NL Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN Fairchild Semiconductor Corporation RFD14N05SM9A vs RFD14N05SM9A_NL
RFD14N05SM9A N-Channel Power MOSFET 50V, 14A, 100mΩ, 2500-REEL onsemi RFD14N05SM9A vs RFD14N05SM9A

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