Part Details for RFD14N05SM9A by Intersil Corporation
Overview of RFD14N05SM9A by Intersil Corporation
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Space Technology
Aerospace and Defense
Energy and Power Systems
Price & Stock for RFD14N05SM9A
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 8662 |
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RFQ |
Part Details for RFD14N05SM9A
RFD14N05SM9A CAD Models
RFD14N05SM9A Part Data Attributes
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RFD14N05SM9A
Intersil Corporation
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Datasheet
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RFD14N05SM9A
Intersil Corporation
14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
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Rohs Code | No | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | INTERSIL CORP | |
Part Package Code | TO-252AA | |
Package Description | TO-252AA, 3 PIN | |
Pin Count | 4 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Additional Feature | AVALANCHE RATED | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 50 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.1 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 48 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 100 ns | |
Turn-on Time-Max (ton) | 60 ns |
Alternate Parts for RFD14N05SM9A
This table gives cross-reference parts and alternative options found for RFD14N05SM9A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD14N05SM9A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
MTD3055E | 8A, 60V, 0.15ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | Texas Instruments | RFD14N05SM9A vs MTD3055E |
RFD14N05SM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Intersil Corporation | RFD14N05SM9A vs RFD14N05SM |
RFD14N05SM | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | RFD14N05SM9A vs RFD14N05SM |
SMD15N05 | Power Field-Effect Transistor, 15A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, | Temic Semiconductors | RFD14N05SM9A vs SMD15N05 |
RFD14N05SM9A | Power Field-Effect Transistor, | Rochester Electronics LLC | RFD14N05SM9A vs RFD14N05SM9A |
2SK2018-01S | Power Field-Effect Transistor, 10A I(D), 60V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, K-PACK(S), 3 PIN | Fuji Electric Co Ltd | RFD14N05SM9A vs 2SK2018-01S |
SSR3055 | Power Field-Effect Transistor, 12A I(D), 60V, 0.15ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 | Samsung Semiconductor | RFD14N05SM9A vs SSR3055 |
MTD8N06E | 8A, 60V, 0.12ohm, N-CHANNEL, Si, POWER, MOSFET, CASE 369A-13, DPAK-3 | Motorola Mobility LLC | RFD14N05SM9A vs MTD8N06E |
RFD14N05SM | Power Field-Effect Transistor, 14A I(D), 50V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Fairchild Semiconductor Corporation | RFD14N05SM9A vs RFD14N05SM |
RFD14N05SM9A_NL | 14A, 50V, 0.1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, TO-252AA, 3 PIN | Rochester Electronics LLC | RFD14N05SM9A vs RFD14N05SM9A_NL |