Part Details for RFD20N03SM by Harris Semiconductor
Overview of RFD20N03SM by Harris Semiconductor
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for RFD20N03SM
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-RFD20N03SM-ND
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DigiKey | N-CHANNEL POWER MOSFET Min Qty: 701 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
8441 In Stock |
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$0.4300 | Buy Now |
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Rochester Electronics | 20A, 30V, 0.025 OHM, N-Channel POWER MOSFET RoHS: Not Compliant Status: Obsolete Min Qty: 1 | 8441 |
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$0.3675 / $0.4323 | Buy Now |
Part Details for RFD20N03SM
RFD20N03SM CAD Models
RFD20N03SM Part Data Attributes
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RFD20N03SM
Harris Semiconductor
Buy Now
Datasheet
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Compare Parts:
RFD20N03SM
Harris Semiconductor
Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | HARRIS SEMICONDUCTOR | |
Package Description | TO-252AA, 3 PIN | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | MEGAFET | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 20 A | |
Drain-source On Resistance-Max | 0.025 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252AA | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 90 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | TIN LEAD | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for RFD20N03SM
This table gives cross-reference parts and alternative options found for RFD20N03SM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RFD20N03SM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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RFD20N03SM | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA | Fairchild Semiconductor Corporation | RFD20N03SM vs RFD20N03SM |
RFD20N03SM9A | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN | Fairchild Semiconductor Corporation | RFD20N03SM vs RFD20N03SM9A |
RFD20N03SM9A | Power Field-Effect Transistor, 20A I(D), 30V, 0.025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA, 3 PIN | Harris Semiconductor | RFD20N03SM vs RFD20N03SM9A |
RFD20N03SM9A | 20A, 30V, 0.025ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, 3 PIN | Intersil Corporation | RFD20N03SM vs RFD20N03SM9A |