Part Details for RHP030N03FRAT100 by ROHM Semiconductor
Overview of RHP030N03FRAT100 by ROHM Semiconductor
- Distributor Offerings: (5 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for RHP030N03FRAT100
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
24AC5294
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Newark | Mosfet, Aec-Q101, N-Ch, 30V, Sot-89, Transistor Polarity:N Channel, Continuous Drain Current Id:3A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.09Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:2.5V, Power Rohs Compliant: Yes |Rohm RHP030N03FRAT100 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2375 |
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$0.3370 / $0.9140 | Buy Now |
DISTI #
2769524RL
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element14 Asia-Pacific | MOSFET, AEC-Q101, N-CH, 30V, SOT-89 RoHS: Compliant Min Qty: 100 Container: Reel | 2425 |
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$0.3023 | Buy Now |
DISTI #
2769524
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element14 Asia-Pacific | MOSFET, AEC-Q101, N-CH, 30V, SOT-89 RoHS: Compliant Min Qty: 5 Container: Cut Tape | 2425 |
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$0.3023 / $0.4997 | Buy Now |
DISTI #
2769524
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Farnell | MOSFET, AEC-Q101, N-CH, 30V, SOT-89 RoHS: Compliant Min Qty: 5 Lead time: 23 Weeks, 1 Days Container: Cut Tape | 2375 |
|
$0.1603 / $0.5711 | Buy Now |
DISTI #
2769524RL
|
Farnell | MOSFET, AEC-Q101, N-CH, 30V, SOT-89 RoHS: Compliant Min Qty: 100 Lead time: 23 Weeks, 1 Days Container: Reel | 2375 |
|
$0.1603 / $0.2793 | Buy Now |
Part Details for RHP030N03FRAT100
RHP030N03FRAT100 CAD Models
RHP030N03FRAT100 Part Data Attributes:
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RHP030N03FRAT100
ROHM Semiconductor
Buy Now
Datasheet
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Compare Parts:
RHP030N03FRAT100
ROHM Semiconductor
Small Signal Field-Effect Transistor,
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-F3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Date Of Intro | 2016-06-14 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.21 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 27 pF | |
JESD-30 Code | R-PSSO-F3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 0.5 W | |
Power Dissipation-Max (Abs) | 2 W | |
Reference Standard | AEC-Q101 | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | 10 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |