RN1301(TE85L,F)
Toshiba America Electronic Components
Description: TRANSISTOR NPN 50V 0.1A SC-70

Overview of RN1301(TE85L,F) by Toshiba America Electronic Components

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Price & Stock for RN1301(TE85L,F) by Toshiba America Electronic Components

Part # Manufacturer Description Stock Price Buy
DISTI # RN1301(TE85L,F)
Avnet Americas Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN1301(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel 0
RFQ
DISTI # 757-RN1301(TE85L,F)
Mouser Electronics Digital Transistors 100mA 50volts 3Pin 4.7K x 4.7Kohms RoHS: Compliant 0
  • 1 $0.2200
  • 10 $0.1350
  • 100 $0.0840
  • 1,000 $0.0500
  • 3,000 $0.0430
  • 9,000 $0.0330
  • 24,000 $0.0310
  • 45,000 $0.0280
  • 99,000 $0.0250
$0.0250 / $0.2200 Order Now
DISTI # C1S751200448292
Chip1Stop Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R RoHS: Compliant 7800
  • 200 $0.1510
  • 600 $0.1440
  • 1,000 $0.1370
  • 5,000 $0.1150
$0.1150 / $0.1510 Buy Now

CAD Models for RN1301(TE85L,F) by Toshiba America Electronic Components
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Part Data Attributes for RN1301(TE85L,F) by Toshiba America Electronic Components

RN1301(TE85L,F)
Toshiba America Electronic Components
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
TOSHIBA CORP
Package Description
SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code
unknown
ECCN Code
EAR99
Samacsys Manufacturer
Toshiba
Additional Feature
BUILT IN BAIS RESISTOR RATIO IS 1
Collector Current-Max (IC)
0.1 A
Collector-Emitter Voltage-Max
50 V
Configuration
SINGLE WITH BUILT-IN RESISTOR
DC Current Gain-Min (hFE)
30
JESD-30 Code
R-PDSO-G3
Number of Elements
1
Number of Terminals
3
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
0.1 W
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
200 MHz
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    Toshiba America Electronic Components
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Alternate Parts for RN1301(TE85L,F)

This table gives cross-reference parts and alternative options found for RN1301(TE85L,F). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN1301(TE85L,F), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FJX3008RTF NPN Epitaxial Silicon Transistor with Bias Resistor, 3000-REEL onsemi RN1301(TE85L,F) vs FJX3008RTF
MUN5111DW1T1G Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL onsemi RN1301(TE85L,F) vs MUN5111DW1T1G
PDTA144TE,115 PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-75 3-Pin NXP Semiconductors RN1301(TE85L,F) vs PDTA144TE,115
MUN2237T1G NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL onsemi RN1301(TE85L,F) vs MUN2237T1G
BCR183E6327HTSA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, Infineon Technologies AG RN1301(TE85L,F) vs BCR183E6327HTSA1
RN2301(TE85L,F) TRANSISTOR PNP 50V 0.1A SC-70 Toshiba America Electronic Components RN1301(TE85L,F) vs RN2301(TE85L,F)
RN2401S,LF(D X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ Toshiba America Electronic Components RN1301(TE85L,F) vs RN2401S,LF(D
BCR169S Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-363, 6 PIN Infineon Technologies AG RN1301(TE85L,F) vs BCR169S
MSC2712YT1G NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL onsemi RN1301(TE85L,F) vs MSC2712YT1G
BCR183E6433HTMA1 Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon Infineon Technologies AG RN1301(TE85L,F) vs BCR183E6433HTMA1

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