There are no models available for this part yet.
Overview of RN1301(TE85L,F) by Toshiba America Electronic Components
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 3 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for RN1301(TE85L,F) by Toshiba America Electronic Components
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
DISTI #
RN1301(TE85L,F)
|
Avnet Americas | Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R - Tape and Reel (Alt: RN1301(TE85L,F)) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ | ||
DISTI #
757-RN1301(TE85L,F)
|
Mouser Electronics | Digital Transistors 100mA 50volts 3Pin 4.7K x 4.7Kohms RoHS: Compliant | 0 |
|
$0.0250 / $0.2200 | Order Now | |
DISTI #
C1S751200448292
|
Chip1Stop | Trans Digital BJT NPN 50V 100mA 3-Pin USM T/R RoHS: Compliant | 7800 |
|
$0.1150 / $0.1510 | Buy Now |
CAD Models for RN1301(TE85L,F) by Toshiba America Electronic Components
Part Data Attributes for RN1301(TE85L,F) by Toshiba America Electronic Components
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Active
|
Ihs Manufacturer
|
TOSHIBA CORP
|
Package Description
|
SMALL OUTLINE, R-PDSO-G3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Samacsys Manufacturer
|
Toshiba
|
Additional Feature
|
BUILT IN BAIS RESISTOR RATIO IS 1
|
Collector Current-Max (IC)
|
0.1 A
|
Collector-Emitter Voltage-Max
|
50 V
|
Configuration
|
SINGLE WITH BUILT-IN RESISTOR
|
DC Current Gain-Min (hFE)
|
30
|
JESD-30 Code
|
R-PDSO-G3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
SMALL OUTLINE
|
Peak Reflow Temperature (Cel)
|
260
|
Polarity/Channel Type
|
PNP
|
Power Dissipation-Max (Abs)
|
0.1 W
|
Surface Mount
|
YES
|
Terminal Form
|
GULL WING
|
Terminal Position
|
DUAL
|
Time@Peak Reflow Temperature-Max (s)
|
30
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Transition Frequency-Nom (fT)
|
200 MHz
|
Alternate Parts for RN1301(TE85L,F)
This table gives cross-reference parts and alternative options found for RN1301(TE85L,F). The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of RN1301(TE85L,F), but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FJX3008RTF | NPN Epitaxial Silicon Transistor with Bias Resistor, 3000-REEL | onsemi | RN1301(TE85L,F) vs FJX3008RTF |
MUN5111DW1T1G | Dual PNP Bipolar Digital Transistor (BRT), SC-88/SC70-6/SOT-363 6 LEAD, 3000-REEL | onsemi | RN1301(TE85L,F) vs MUN5111DW1T1G |
PDTA144TE,115 | PDTA144T series - PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open SC-75 3-Pin | NXP Semiconductors | RN1301(TE85L,F) vs PDTA144TE,115 |
MUN2237T1G | NPN Bipolar Digital Transistor (BRT), SC-59 3 LEAD, 3000-REEL | onsemi | RN1301(TE85L,F) vs MUN2237T1G |
BCR183E6327HTSA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, | Infineon Technologies AG | RN1301(TE85L,F) vs BCR183E6327HTSA1 |
RN2301(TE85L,F) | TRANSISTOR PNP 50V 0.1A SC-70 | Toshiba America Electronic Components | RN1301(TE85L,F) vs RN2301(TE85L,F) |
RN2401S,LF(D | X34 PB-F SOT-23 PLN (LF) TRANSISTOR PD=200MW F=250MHZ | Toshiba America Electronic Components | RN1301(TE85L,F) vs RN2401S,LF(D |
BCR169S | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon, SOT-363, 6 PIN | Infineon Technologies AG | RN1301(TE85L,F) vs BCR169S |
MSC2712YT1G | NPN Bipolar Transistor, SC-59 3 LEAD, 3000-REEL | onsemi | RN1301(TE85L,F) vs MSC2712YT1G |
BCR183E6433HTMA1 | Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon | Infineon Technologies AG | RN1301(TE85L,F) vs BCR183E6433HTMA1 |