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Small Signal Field-Effect Transistor,
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
RQ6E040XNTCRCT-ND
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DigiKey | MOSFET N-CH 30V 4A TSMT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2900 In Stock |
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$0.1603 / $0.5500 | Buy Now |
DISTI #
RQ6E040XNTCR
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Avnet Americas | Transistor Signal MOSFET N-CH 30V 4A 6-Pin SOT-457T Emboss T/R - Tape and Reel (Alt: RQ6E040XNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1600 / $0.1825 | Buy Now |
DISTI #
755-RQ6E040XNTCR
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Mouser Electronics | MOSFET RQ6E040XN is the low on-resistance MOSFET, built-in G-S protection diode for switching application. RoHS: Compliant | 889 |
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$0.1590 / $0.5500 | Buy Now |
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Future Electronics | RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.1667 | Buy Now |
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Quest Components | 2281 |
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$0.2680 / $0.6700 | Buy Now | |
DISTI #
RQ6E040XNTCR
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Avnet Americas | Transistor Signal MOSFET N-CH 30V 4A 6-Pin SOT-457T Emboss T/R - Tape and Reel (Alt: RQ6E040XNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1600 / $0.1825 | Buy Now |
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Ameya Holding Limited | Min Qty: 1 | 100-Authorized Distributor |
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$0.1500 / $0.3000 | Buy Now |
DISTI #
RQ6E040XNTCR
|
Avnet Americas | Transistor Signal MOSFET N-CH 30V 4A 6-Pin SOT-457T Emboss T/R - Tape and Reel (Alt: RQ6E040XNTCR) Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
$0.1600 / $0.1825 | Buy Now |
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RQ6E040XNTCR
ROHM Semiconductor
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Datasheet
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Compare Parts:
RQ6E040XNTCR
ROHM Semiconductor
Small Signal Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ROHM CO LTD | |
Package Description | SC-95, SOT-457T, 6 PIN | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2017-10-18 | |
Samacsys Manufacturer | ROHM Semiconductor | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 4 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 35 pF | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.25 W | |
Surface Mount | YES | |
Terminal Finish | Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |