Datasheets
SFR9024TM by:

Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3

Part Details for SFR9024TM by Fairchild Semiconductor Corporation

Overview of SFR9024TM by Fairchild Semiconductor Corporation

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Applications Consumer Electronics Energy and Power Systems Renewable Energy

Price & Stock for SFR9024TM

Part # Distributor Description Stock Price Buy
Bristol Electronics   2221
RFQ
Rochester Electronics 7.8A, 60V, 0.28ohm, P-Channel Power MOSFET, TO-252 RoHS: Compliant Status: Obsolete Min Qty: 1 175
  • 1 $0.4323
  • 25 $0.4237
  • 100 $0.4064
  • 500 $0.3891
  • 1,000 $0.3675
$0.3675 / $0.4323 Buy Now
ComSIT USA ADVANCED P-CHANNEL POWER MOSFET Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 RoHS: Compliant Europe - 8995
RFQ

Part Details for SFR9024TM

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SFR9024TM Part Data Attributes

SFR9024TM Fairchild Semiconductor Corporation
Buy Now Datasheet
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SFR9024TM Fairchild Semiconductor Corporation Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code TO-252
Package Description DPAK-3
Pin Count 3
Reach Compliance Code not_compliant
ECCN Code EAR99
Avalanche Energy Rating (Eas) 104 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 7.8 A
Drain-source On Resistance-Max 0.28 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 32 W
Pulsed Drain Current-Max (IDM) 31 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SFR9024TM

This table gives cross-reference parts and alternative options found for SFR9024TM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SFR9024TM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SFR9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 Fairchild Semiconductor Corporation SFR9024TM vs SFR9024
SFR9024TM 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC SFR9024TM vs SFR9024TM
SFR9024TF 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC SFR9024TM vs SFR9024TF
SFR9024TF Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SFR9024TM vs SFR9024TF
Part Number Description Manufacturer Compare
FQD7P06 Power Field-Effect Transistor, 5.4A I(D), 60V, 0.451ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SFR9024TM vs FQD7P06
SFR9024 Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-2 Fairchild Semiconductor Corporation SFR9024TM vs SFR9024
SFR9024TF 7.8A, 60V, 0.28ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252, DPAK-3 Rochester Electronics LLC SFR9024TM vs SFR9024TF
SFW9Z14TM Power Field-Effect Transistor, 6.7A I(D), 60V, 0.5ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, D2PAK-3 Fairchild Semiconductor Corporation SFR9024TM vs SFW9Z14TM
SPD08P05 Power Field-Effect Transistor, 8A I(D), 50V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, DPAK-3 Infineon Technologies AG SFR9024TM vs SPD08P05
SFR9024TF Power Field-Effect Transistor, 7.8A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation SFR9024TM vs SFR9024TF
RFD8P06ESM9A Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA, TO-252AA VARIANT, 3 PIN Fairchild Semiconductor Corporation SFR9024TM vs RFD8P06ESM9A
RFD8P06ESM Power Field-Effect Transistor, 8A I(D), 60V, 0.3ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252AA Fairchild Semiconductor Corporation SFR9024TM vs RFD8P06ESM
FQD7P06TM Power MOSFET, P-Channel, QFET®, -60 V, -5.4 A, 450 mΩ, DPAK, 2500-REEL onsemi SFR9024TM vs FQD7P06TM
SFW9Z24 Power Field-Effect Transistor, 9.7A I(D), 60V, 0.28ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Samsung Semiconductor SFR9024TM vs SFW9Z24

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