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Transistors / Small Signal Field-Effect Transistors / SI1308EDL-T1-GE3
Datasheets
SI1308EDL-T1-GE3 by:

Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN

Part Details for SI1308EDL-T1-GE3 by Vishay Intertechnologies

Results Overview of SI1308EDL-T1-GE3 by Vishay Intertechnologies

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI1308EDL-T1-GE3 Information

SI1308EDL-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI1308EDL-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 62W0529
Newark Mosfet Transistor, N Channel, 1.4 A, 30 V, 0.11 Ohm, 10 V, 600 Mv Rohs Compliant: Yes |Vishay SI1308EDL-T1-GE3 RoHS: Compliant Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape 89624
  • 1 $0.4700
  • 10 $0.3000
  • 25 $0.2570
  • 50 $0.2150
  • 100 $0.1720
$0.1720 / $0.4700 Buy Now
DISTI # 96AJ0100
Newark Mosfet, N-Ch, 30V, 1.4A, Sot-323 Rohs Compliant: Yes |Vishay SI1308EDL-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 9000
  • 3,000 $0.1450
  • 6,000 $0.1390
  • 12,000 $0.1330
  • 18,000 $0.1270
  • 30,000 $0.1190
$0.1190 / $0.1450 Buy Now
DISTI # SI1308EDL-T1-GE3
Avnet Americas N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI1308EDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 105000
  • 3,000 $0.0938
$0.0938 Buy Now
Bristol Electronics   9698
RFQ
DISTI # SI1308EDL-T1-GE3
TME Transistor: N-MOSFET, unipolar, 30V, 1.4A, Idm: 6A, 0.3W, SC70, ESD Min Qty: 1 2302
  • 1 $0.3880
  • 10 $0.2620
  • 50 $0.2240
  • 100 $0.1770
  • 250 $0.1630
  • 500 $0.1290
  • 2,500 $0.1270
$0.1270 / $0.3880 Buy Now
Chip 1 Exchange INSTOCK 903
RFQ
DISTI # SI1308EDL-T1-GE3
Avnet Asia N-CHANNEL 30-V (D-S) MOSFET (Alt: SI1308EDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED 30V 1.5A 400mW 0.132@10V,1.4A 1.5V@250uA 1 N-Channel SOT-323 MOSFETs ROHS 29095
  • 1 $0.0857
  • 100 $0.0784
  • 1,000 $0.0751
$0.0751 / $0.0857 Buy Now
DISTI # SI1308EDL-T1-GE3
EBV Elektronik N-CHANNEL 30-V (D-S) MOSFET (Alt: SI1308EDL-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days EBV - 12000
Buy Now
LCSC 30V 1.5A 400mW 0.13210V1.4A 1.5V250uA 1 N-channel SOT-323 MOSFETs ROHS 23740
  • 5 $0.1158
  • 50 $0.0940
  • 150 $0.0831
  • 500 $0.0749
  • 3,000 $0.0594
  • 6,000 $0.0561
$0.0561 / $0.1158 Buy Now

Part Details for SI1308EDL-T1-GE3

SI1308EDL-T1-GE3 CAD Models

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SI1308EDL-T1-GE3 Part Data Attributes

Parametric Data
SI1308EDL-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI1308EDL-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 1.4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, SC-70, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 1.4 A
Drain-source On Resistance-Max 0.132 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 11 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI1308EDL-T1-GE3

This table gives cross-reference parts and alternative options found for SI1308EDL-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI1308EDL-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
BSH103,235 NXP Semiconductors Check for Price BSH103 - N-channel TrenchMOS logic level FET TO-236 3-Pin SI1308EDL-T1-GE3 vs BSH103,235
MMBF0201NLT1 Motorola Mobility LLC Check for Price 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB SI1308EDL-T1-GE3 vs MMBF0201NLT1
MMBF0201NLT3 onsemi Check for Price 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC, CASE 318-08, 3 PIN SI1308EDL-T1-GE3 vs MMBF0201NLT3
SI1300BDL-T1-E3 Vishay Siliconix Check for Price TRANSISTOR 400 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, SC-70, 3 PIN, FET General Purpose Small Signal SI1308EDL-T1-GE3 vs SI1300BDL-T1-E3
BSH103 NXP Semiconductors Check for Price TRANSISTOR 850 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, PLASTIC, SMD, 3 PIN, FET General Purpose Small Signal SI1308EDL-T1-GE3 vs BSH103
MMBF0201NLT1G onsemi $0.1465 Single N-Channel Small Signal Logic Level Power MOSFET 20V, 300mA, 1Ω, SOT-23 (TO-236) 3 LEAD, 3000-REEL SI1308EDL-T1-GE3 vs MMBF0201NLT1G
BSH103,215 NXP Semiconductors Check for Price BSH103 - N-channel TrenchMOS logic level FET TO-236 3-Pin SI1308EDL-T1-GE3 vs BSH103,215
MMBF0201NLT3 Motorola Mobility LLC Check for Price 300mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB SI1308EDL-T1-GE3 vs MMBF0201NLT3
SI1304BDL-T1-E3 Vishay Intertechnologies Check for Price Small Signal Field-Effect Transistor, 0.85A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-70, 3 PIN SI1308EDL-T1-GE3 vs SI1304BDL-T1-E3

SI1308EDL-T1-GE3 Related Parts

SI1308EDL-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI1308EDL-T1-GE3 is a standard SOT23-6 package with a 1.6mm x 1.6mm body size. A minimum pad size of 0.8mm x 0.8mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.

  • The SI1308EDL-T1-GE3 is rated for operation in an ambient temperature range of -40°C to +125°C. However, the device's performance and reliability may degrade at extreme temperatures.

  • Yes, the SI1308EDL-T1-GE3 is AEC-Q100 qualified and suitable for high-reliability and automotive applications. However, it's essential to follow the recommended operating conditions and design guidelines to ensure the device meets the specific application requirements.

  • To prevent ESD damage, handle the SI1308EDL-T1-GE3 with an anti-static wrist strap or mat, and ensure the PCB is properly grounded. Avoid touching the device's pins or handling the device in environments with high electrostatic potential.

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