Datasheets
SI2319DS-T1-E3 by:

Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN

Part Details for SI2319DS-T1-E3 by Vishay Intertechnologies

Overview of SI2319DS-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI2319DS-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # 06J7581
Newark P Channel Mosfet, -40V, -3A, To-236, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2319DS-T1-E3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 240929
  • 1 $0.3460
  • 25 $0.3460
  • 50 $0.3460
  • 100 $0.3170
  • 250 $0.3170
  • 500 $0.3170
$0.3170 / $0.3460 Buy Now
DISTI # 85W0177
Newark P Channel Mosfet, -40V, 3A, To-236, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:40V, Continuous Drain Current Id:3A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI2319DS-T1-E3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2640
  • 6,000 $0.2580
  • 12,000 $0.2490
  • 18,000 $0.2480
  • 30,000 $0.2460
$0.2460 / $0.2640 Buy Now
DISTI # SI2319DS-T1-E3
Avnet Americas Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel 6000
  • 3,000 $0.2698
  • 6,000 $0.2660
  • 12,000 $0.2622
  • 18,000 $0.2584
  • 24,000 $0.2527
  • 30,000 $0.2489
  • 300,000 $0.2451
$0.2451 / $0.2698 Buy Now
DISTI # SI2319DS-T1-E3
Avnet Americas Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Tape and Reel (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel 0
  • 1 $0.3173
  • 10 $0.3097
  • 30 $0.3021
  • 50 $0.2850
  • 100 $0.2774
  • 250 $0.2698
  • 500 $0.2565
$0.2565 / $0.3173 Buy Now
DISTI # 06J7581
Avnet Americas Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 06J7581) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 11 Weeks, 1 Days Container: Ammo Pack 240979 Partner Stock
  • 1 $0.7690
$0.7690 Buy Now
Bristol Electronics   4873
RFQ
DISTI # SI2319DS-T1-E3
TME Transistor: P-MOSFET, TrenchFET®, unipolar, -40V, -2.4A, Idm: -12A Min Qty: 1 4052
  • 1 $1.0040
  • 5 $0.5870
  • 25 $0.5290
  • 100 $0.4670
  • 500 $0.4190
$0.4190 / $1.0040 Buy Now
DISTI # STDMOS1536
Rutronik P-CH 40V 4,4A 130mOhm TO-236 RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel Stock DE - 21000
Stock HK - 0
Stock US - 0
Stock SG - 0
  • 3,000 $0.3470
  • 6,000 $0.3271
  • 9,000 $0.3073
  • 12,000 $0.2677
$0.2677 / $0.3470 Buy Now
DISTI # SI2319DS-T1-E3
Avnet Asia Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days 0
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 150
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now
DISTI # SI2319DS-T1-E3
EBV Elektronik Trans MOSFET P-CH 40V 2.3A 3-Pin SOT-23 T/R (Alt: SI2319DS-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
DISTI # SI2319DS
Maritex Transistor: P-MOSFET, unipolar, -40V, -2.3A, 0.082ohm, 0.75W, -55+150 deg.C, SMD, SOT23 Min Qty: 1 Package Multiple: 1 90
  • 1 $1.6030
  • 25 $1.4890
  • 100 $1.3240
  • 500 $1.2160
  • 3,000 $1.1320
$1.1320 / $1.6030 Buy Now

Part Details for SI2319DS-T1-E3

SI2319DS-T1-E3 CAD Models

SI2319DS-T1-E3 Part Data Attributes:

SI2319DS-T1-E3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2319DS-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 2.3 A
Drain-source On Resistance-Max 0.082 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 65 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2319DS-T1-E3

This table gives cross-reference parts and alternative options found for SI2319DS-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2319DS-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI2319DS-T1-GE3 TRANSISTOR 2300 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2319DS-T1-E3 vs SI2319DS-T1-GE3
SI2319DS-T1-E3 TRANSISTOR 2300 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2319DS-T1-E3 vs SI2319DS-T1-E3
SI2319DS Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Intertechnologies SI2319DS-T1-E3 vs SI2319DS
SI2319DS-T1-GE3 Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2319DS-T1-E3 vs SI2319DS-T1-GE3
Part Number Description Manufacturer Compare
SI2319DS Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, 3 PIN Vishay Intertechnologies SI2319DS-T1-E3 vs SI2319DS
SI2319DS-T1-GE3 Small Signal Field-Effect Transistor, 2.3A I(D), 40V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236, SOT-23, 3 PIN Vishay Intertechnologies SI2319DS-T1-E3 vs SI2319DS-T1-GE3
SI2319DS-T1-E3 TRANSISTOR 2300 mA, 40 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, ROHS COMPLIANT PACKAGE-3, FET General Purpose Small Signal Vishay Siliconix SI2319DS-T1-E3 vs SI2319DS-T1-E3

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