Part Details for SI2366DS-T1-GE3 by Vishay Siliconix
Overview of SI2366DS-T1-GE3 by Vishay Siliconix
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for SI2366DS-T1-GE3
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI2366DS-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 5.8A SOT23-3 Min Qty: 1 Lead time: 18 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
16649 In Stock |
|
$0.1250 / $0.4400 | Buy Now |
DISTI #
70459517
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RS | SI2366DS-T1-GE3 N-channel MOSFET Transistor, 5.8 A, 30 V, 3-Pin SOT-23 | Siliconix / Vishay SI2366DS-T1-GE3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk | 0 |
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$0.3210 / $0.3780 | RFQ |
Part Details for SI2366DS-T1-GE3
SI2366DS-T1-GE3 CAD Models
SI2366DS-T1-GE3 Part Data Attributes
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SI2366DS-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI2366DS-T1-GE3
Vishay Siliconix
N-CHANNEL 30-V (D-S) MOSFET - Tape and Reel
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Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT-23 | |
Package Description | SMALL OUTLINE, R-PDSO-G3 | |
Pin Count | 3 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 5.8 A | |
Drain-source On Resistance-Max | 0.036 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 30 pF | |
JEDEC-95 Code | TO-236AB | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for SI2366DS-T1-GE3
This table gives cross-reference parts and alternative options found for SI2366DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2366DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
TSM3404CXRF | Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-3 | Taiwan Semiconductor | SI2366DS-T1-GE3 vs TSM3404CXRF |