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Transistors / Small Signal Field-Effect Transistors / SI2369DS-T1-GE3
Datasheets
SI2369DS-T1-GE3 by:

Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN

Part Details for SI2369DS-T1-GE3 by Vishay Intertechnologies

Results Overview of SI2369DS-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

SI2369DS-T1-GE3 Information

SI2369DS-T1-GE3 by Vishay Intertechnologies is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for SI2369DS-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # 96AJ0112
Newark Mosfet, P-Ch, 30V, 7.6A, Sot-23 Rohs Compliant: Yes |Vishay SI2369DS-T1-GE3 RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 147000
  • 3,000 $0.1590
  • 6,000 $0.1530
  • 12,000 $0.1480
  • 18,000 $0.1450
  • 30,000 $0.1440
$0.1440 / $0.1590 Buy Now
DISTI # 70AC6498
Newark Mosfet, P-Ch, -30V, -7.6A, 150Deg C, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:7.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2.5V, Msl:- Rohs Compliant: Yes |Vishay SI2369DS-T1-GE3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 13635
  • 1 $0.1260
  • 10 $0.1260
  • 25 $0.1260
  • 50 $0.1260
  • 100 $0.1260
$0.1260 Buy Now
DISTI # SI2369DS-T1-GE3
Avnet Americas P-CHANNEL 30-V (D-S) MOSFET - Tape and Reel (Alt: SI2369DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 17 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1191
  • 12,000 $0.1113
  • 18,000 $0.1096
  • 30,000 $0.1077
  • 60,000 $0.1065
$0.1065 / $0.1191 Buy Now
Bristol Electronics   1868
RFQ
DISTI # SI2369DS-T1-GE3
TME Transistor: P-MOSFET, unipolar, -30V, -7.6A, Idm: -80A, 1.6W, SOT23 Min Qty: 1 3118
  • 1 $0.3670
  • 10 $0.2980
  • 25 $0.2480
  • 100 $0.2220
  • 250 $0.1980
  • 500 $0.1840
  • 1,000 $0.1780
  • 3,000 $0.1720
$0.1720 / $0.3670 Buy Now
DISTI # SI2369DS-T1-GE3
Avnet Asia P-CHANNEL 30-V (D-S) MOSFET (Alt: SI2369DS-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 19 Weeks, 0 Days 0
RFQ
CHIPMALL.COM LIMITED 30V 5.4A 1.6W 0.029@10V,5.4A 1.2V@250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS 18841
  • 10 $0.1957
  • 50 $0.1806
  • 200 $0.1679
  • 600 $0.1553
  • 1,500 $0.1452
  • 3,000 $0.1389
$0.1389 / $0.1957 Buy Now
DISTI # SI2369DS-T1-GE3
EBV Elektronik P-CHANNEL 30-V (D-S) MOSFET (Alt: SI2369DS-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 18 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 5.4A 1.6W 0.02910V5.4A 1.2V250uA 1 Piece P-Channel SOT-23 MOSFETs ROHS 2532
  • 5 $0.3215
  • 50 $0.2513
  • 150 $0.2213
  • 500 $0.1837
  • 3,000 $0.1591
  • 6,000 $0.1491
$0.1491 / $0.3215 Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 3000 3000
  • 3,000 $0.2387
$0.2387 Buy Now

Part Details for SI2369DS-T1-GE3

SI2369DS-T1-GE3 CAD Models

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SI2369DS-T1-GE3 Part Data Attributes

Parametric Data
SI2369DS-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI2369DS-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 7.6A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, HALOGEN FREE AND ROHS COMPLIANT, TO-236, 3 PIN
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TO-236, SOT-23, 3 PIN
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 17 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 7.6 A
Drain-source On Resistance-Max 0.029 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 130 pF
JEDEC-95 Code TO-236AB
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for SI2369DS-T1-GE3

This table gives cross-reference parts and alternative options found for SI2369DS-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI2369DS-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
PHP1035118 NXP Semiconductors Check for Price TRANSISTOR 8000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, FET General Purpose Small Signal SI2369DS-T1-GE3 vs PHP1035118

SI2369DS-T1-GE3 Related Parts

SI2369DS-T1-GE3 Frequently Asked Questions (FAQ)

  • The recommended PCB footprint for the SI2369DS-T1-GE3 is a 6-pin SOT23 package with a 2.9mm x 1.6mm body size. A minimum pad size of 0.5mm x 0.5mm is recommended for reliable soldering.

  • To ensure proper biasing, connect the input pin (VIN) to a stable voltage source between 2.5V to 5.5V, and the enable pin (EN) to a logic-level signal (0V or VIN). The output pin (VOUT) should be decoupled with a 1uF ceramic capacitor to ensure stability.

  • The SI2369DS-T1-GE3 is capable of delivering up to 1A of continuous output current. However, it's recommended to limit the output current to 0.8A for optimal reliability and thermal performance.

  • To ensure reliable operation, it's essential to provide adequate thermal management for the SI2369DS-T1-GE3. A thermal pad on the bottom of the package helps to dissipate heat. Ensure good thermal conductivity between the package and the PCB, and consider adding thermal vias or a heat sink if necessary.

  • While the SI2369DS-T1-GE3 is a general-purpose voltage regulator, it's not specifically designed for automotive applications. For automotive applications, consider using AEC-Q100 qualified devices that meet the required temperature range, voltage, and reliability standards.

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