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Transistors Power Field-Effect Transistors SI3456DV-T1

SI3456DV-T1
Description: Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,

Overview of SI3456DV-T1 by Temic Semiconductors

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
  • CAD Models: ( Request Part )
  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Education and Research Internet of Things (IoT) Computing and Data Storage Financial Technology (Fintech) Aerospace and Defense Healthcare Telecommunications Automotive

Available Datasheets

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CAD Models for SI3456DV-T1 by Temic Semiconductors
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Part Data Attributes for SI3456DV-T1 by Temic Semiconductors
Parametric Data

SI3456DV-T1
Temic Semiconductors
Buy Now
-
-
Part Life Cycle Code
Transferred
Ihs Manufacturer
TEMIC SEMICONDUCTORS
Reach Compliance Code
unknown
ECCN Code
EAR99
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
30 V
Drain Current-Max (ID)
5.1 A
Drain-source On Resistance-Max
0.045 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G
Number of Elements
1
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Polarity/Channel Type
N-CHANNEL
Pulsed Drain Current-Max (IDM)
20 A
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Element Material
SILICON
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  1. SI3456DV-T1
    Temic Semiconductors
    Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
    VS

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