Datasheets
SI3456DV-T1 by:

Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6

Part Details for SI3456DV-T1 by Vishay Siliconix

Overview of SI3456DV-T1 by Vishay Siliconix

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Applications Education and Research Internet of Things (IoT) Computing and Data Storage Financial Technology (Fintech) Aerospace and Defense Healthcare Telecommunications Automotive

Price & Stock for SI3456DV-T1

Part # Distributor Description Stock Price Buy
Bristol Electronics   Min Qty: 13 740
  • 13 $0.4125
  • 50 $0.2681
  • 188 $0.1547
  • 648 $0.1320
$0.1320 / $0.4125 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 592
  • 1 $0.5500
  • 46 $0.2750
  • 219 $0.1650
$0.1650 / $0.5500 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 927
  • 1 $0.6000
  • 168 $0.3000
  • 668 $0.2400
$0.2400 / $0.6000 Buy Now
Quest Components MOSFET Transistor, N-Channel, TSOP 2148
  • 1 $0.6000
  • 168 $0.3000
  • 668 $0.2400
$0.2400 / $0.6000 Buy Now

Part Details for SI3456DV-T1

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SI3456DV-T1 Part Data Attributes

SI3456DV-T1 Vishay Siliconix
Buy Now Datasheet
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SI3456DV-T1 Vishay Siliconix Power Field-Effect Transistor, 5.1A I(D), 30V, 0.045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description TSOP-6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 5.1 A
Drain-source On Resistance-Max 0.045 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e0
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 20 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish TIN LEAD
Terminal Form GULL WING
Terminal Position DUAL
Transistor Element Material SILICON

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