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Transistors / Small Signal Field-Effect Transistors / SI3474DV-T1-GE3
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SI3474DV-T1-GE3 by:

Small Signal Field-Effect Transistor, 3.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6

Part Details for SI3474DV-T1-GE3 by Vishay Intertechnologies

Overview of SI3474DV-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Renewable Energy Automotive

Price & Stock for SI3474DV-T1-GE3

Part # Distributor Description Stock Price Buy
DISTI # SI3474DV-T1-GE3
Avnet Americas Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3474DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1645
  • 12,000 $0.1592
  • 18,000 $0.1539
  • 30,000 $0.1477
  • 60,000 $0.1429
  • 300,000 $0.1362
  • 600,000 $0.1295
$0.1295 / $0.1645 Buy Now
DISTI # 78-SI3474DV-T1-GE3
Mouser Electronics MOSFET 100V Vds 20V Vgs TSOP-6 RoHS: Compliant 0
  • 1 $0.4200
  • 10 $0.3620
  • 100 $0.2710
  • 500 $0.2130
  • 1,000 $0.1640
  • 3,000 $0.1500
  • 9,000 $0.1300
  • 24,000 $0.1230
  • 45,000 $0.1210
$0.1210 / $0.4200 Order Now
Future Electronics MOSFET 100V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Yes Min Qty: 6000 Package Multiple: 3000 Container: Reel 0
Reel
  • 3,000 $0.1530
  • 6,000 $0.1500
  • 9,000 $0.1490
  • 15,000 $0.1460
  • 30,000 $0.1420
$0.1420 / $0.1530 Buy Now
DISTI # SI3474DV-T1-GE3
TTI MOSFET 100V Vds 20V Vgs TSOP-6 RoHS: Compliant pbFree: Pb-Free Min Qty: 6000 Package Multiple: 3000 Container: Reel Americas - 0
  • 6,000 $0.1380
  • 9,000 $0.1320
  • 15,000 $0.1300
  • 30,000 $0.1270
  • 60,000 $0.1250
  • 300,000 $0.1220
$0.1220 / $0.1380 Buy Now
DISTI # SI3474DV-T1-GE3
Avnet Americas Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3474DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1645
  • 12,000 $0.1592
  • 18,000 $0.1539
  • 30,000 $0.1477
  • 60,000 $0.1429
  • 300,000 $0.1362
  • 600,000 $0.1295
$0.1295 / $0.1645 Buy Now
DISTI # SI3474DV-T1-GE3
TME Transistor: N-MOSFET, TrenchFET®, unipolar, 100V, 3.8A, Idm: 14A Min Qty: 1 0
  • 1 $0.4170
  • 10 $0.3210
  • 25 $0.2840
  • 100 $0.2250
  • 250 $0.2140
  • 500 $0.1930
  • 1,000 $0.1610
  • 3,000 $0.1540
$0.1540 / $0.4170 RFQ
DISTI # SI3474DV-T1-GE3
Avnet Americas Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3474DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 38 Weeks, 0 Days Container: Reel 0
  • 6,000 $0.1645
  • 12,000 $0.1592
  • 18,000 $0.1539
  • 30,000 $0.1477
  • 60,000 $0.1429
  • 300,000 $0.1362
  • 600,000 $0.1295
$0.1295 / $0.1645 Buy Now
DISTI # SI3474DV-T1-GE3
Avnet Asia Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R (Alt: SI3474DV-T1-GE3) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 46 Weeks, 0 Days 0
RFQ
DISTI # SI3474DV-T1-GE3
EBV Elektronik Trans MOSFET N-CH 100V 2.8A 6-Pin TSOP T/R (Alt: SI3474DV-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 5 Weeks, 4 Days EBV - 0
Buy Now
DISTI # 2400361
element14 Asia-Pacific MOSFET, N CH, 100V, 3.8A, TSOP-6 RoHS: Compliant Min Qty: 5 Container: Each 0
  • 5 $0.4506
  • 10 $0.3803
  • 100 $0.2755
  • 500 $0.2161
  • 1,000 $0.1553
  • 5,000 $0.1524
$0.1524 / $0.4506 Buy Now

Part Details for SI3474DV-T1-GE3

SI3474DV-T1-GE3 CAD Models

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SI3474DV-T1-GE3 Part Data Attributes

Parametric Data
SI3474DV-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI3474DV-T1-GE3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 3.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description HALOGEN FREE AND ROHS COMPLIANT, MO-193C, TSOP-6
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 38 Weeks
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 100 V
Drain Current-Max (ID) 3.8 A
Drain-source On Resistance-Max 0.126 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 14 pF
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.6 W
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

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