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Part Details for SI3552DV-T1-E3 by Vishay Intertechnologies
Overview of SI3552DV-T1-E3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for SI3552DV-T1-E3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
SI3552DV-T1-E3
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Avnet Americas | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 12000 |
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$0.2488 | Buy Now |
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DISTI #
SI3552DV-T1-E3
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Avnet Americas | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
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$0.2002 / $0.2477 | Buy Now |
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DISTI #
781-SI3552DV-E3
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Mouser Electronics | MOSFET RECOMMENDED ALT SI3552DV-GE3 RoHS: Compliant | 192072 |
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$0.2530 / $0.6700 | Buy Now |
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Future Electronics | 30V N & P CH (D-S) TRENCH RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 6000Reel |
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$0.2200 / $0.2350 | Buy Now |
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Future Electronics | 30V N & P CH (D-S) TRENCH RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 3000Reel |
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$0.2200 / $0.2350 | Buy Now |
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Quest Components | 2500 mA, 30 V, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET | 364 |
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$0.3300 / $1.1000 | Buy Now |
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DISTI #
SI3552DV-T1-E3
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TTI | MOSFET RECOMMENDED ALT SI3552DV-GE3 RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 99000 In Stock |
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$0.2200 / $0.2350 | Buy Now |
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DISTI #
SI3552DV-T1-E3
|
Avnet Americas | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-E3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Container: Reel | 12000 |
|
$0.2488 | Buy Now |
|
DISTI #
SI3552DV-T1-E3
|
Avnet Americas | Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R - Tape and Reel (Alt: SI3552DV-T1-E3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks, 0 Days Container: Reel | 0 |
|
$0.2002 / $0.2477 | Buy Now |
|
DISTI #
SI3552DV-T1-E3
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TME | Transistor: N/P-MOSFET, TrenchFET®, unipolar, 30/-30V, 2.5/-1.8A Min Qty: 1 | 2999 |
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$0.3250 / $0.6470 | Buy Now |
Part Details for SI3552DV-T1-E3
SI3552DV-T1-E3 CAD Models
SI3552DV-T1-E3 Part Data Attributes
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SI3552DV-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI3552DV-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 1-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, TSOP-6
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | TSOP-6 | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 9 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 40 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 28 ns | |
| Turn-on Time-Max (ton) | 25 ns |