Datasheets
SI3552DV-T1-E3 by:

Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R

Part Details for SI3552DV-T1-E3 by Vishay Siliconix

Overview of SI3552DV-T1-E3 by Vishay Siliconix

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Price & Stock for SI3552DV-T1-E3

Part # Distributor Description Stock Price Buy
DISTI # SI3552DV-T1-E3CT-ND
DigiKey MOSFET N/P-CH 30V 2.5A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) 12044
In Stock
  • 1 $0.6700
  • 10 $0.5840
  • 100 $0.4043
  • 500 $0.3378
  • 1,000 $0.2875
  • 3,000 $0.2560
  • 6,000 $0.2426
  • 9,000 $0.2246
  • 30,000 $0.2224
$0.2224 / $0.6700 Buy Now
DISTI # 70026103
RS MOSFET, Dual, Complementary, 30V, 2.5/1.8A, TSOP-6 | Siliconix / Vishay SI3552DV-T1-E3 RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Container: Bulk 0
  • 3,000 $0.7900
  • 30,000 $0.7500
  • 150,000 $0.7100
  • 300,000 $0.6700
$0.6700 / $0.7900 RFQ
New Advantage Corporation Dual N & P Channel 30 V 0.105/0.2 Ohms Surface Mount Power Mosfet - TSOP-6 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 18000
  • 3,000 $0.2571
  • 18,000 $0.2400
$0.2400 / $0.2571 Buy Now

Part Details for SI3552DV-T1-E3

SI3552DV-T1-E3 CAD Models

SI3552DV-T1-E3 Part Data Attributes

SI3552DV-T1-E3 Vishay Siliconix
Buy Now Datasheet
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SI3552DV-T1-E3 Vishay Siliconix Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer VISHAY SILICONIX
Part Package Code TSOP
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.5 A
Drain-source On Resistance-Max 0.105 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code MO-193AA
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Pulsed Drain Current-Max (IDM) 8 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Element Material SILICON
Turn-off Time-Max (toff) 28 ns
Turn-on Time-Max (ton) 25 ns

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