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Part Details for SI3552DV-T1-GE3 by Vishay Siliconix
Overview of SI3552DV-T1-GE3 by Vishay Siliconix
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- Number of FFF Equivalents:
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- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
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Price & Stock for SI3552DV-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI3552DV-T1-GE3CT-ND
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DigiKey | MOSFET N/P-CH 30V 2.5A 6TSOP Min Qty: 1 Lead time: 11 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3382 In Stock |
|
$0.2625 / $0.8000 | Buy Now |
Part Details for SI3552DV-T1-GE3
SI3552DV-T1-GE3 CAD Models
SI3552DV-T1-GE3 Part Data Attributes
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SI3552DV-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
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SI3552DV-T1-GE3
Vishay Siliconix
Trans MOSFET N/P-CH 30V 2.5A/1.8A 6-Pin TSOP T/R
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY SILICONIX | |
| Part Package Code | TSOP | |
| Package Description | SMALL OUTLINE, R-PDSO-G6 | |
| Pin Count | 6 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 2.5 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MO-193AA | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Max (toff) | 28 ns | |
| Turn-on Time-Max (ton) | 25 ns |