-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 21.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
SI4164DY-T1-GE3CT-ND
|
DigiKey | MOSFET N-CH 30V 30A 8SO Min Qty: 1 Lead time: 19 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
32927 In Stock |
|
$0.5875 / $2.1600 | Buy Now |
DISTI #
70026401
|
RS | MOSFET, N-CH, VDS 30V, RDS(ON) 0.0026Ohm, ID 30A, SO-8, PD 6.0W, VGS +/-20V | Siliconix / Vishay SI4164DY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
|
$1.3400 / $1.5800 | RFQ |
|
Quest Components | 21500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 50 |
|
$1.0200 / $1.2750 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI4164DY-T1-GE3
Vishay Siliconix
Buy Now
Datasheet
|
Compare Parts:
SI4164DY-T1-GE3
Vishay Siliconix
Small Signal Field-Effect Transistor, 21.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 21.5 A | |
Drain-source On Resistance-Max | 0.0032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4164DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4164DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDS7066N3 | Small Signal Field-Effect Transistor, 23A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FLMP, SO-8 | Fairchild Semiconductor Corporation | SI4164DY-T1-GE3 vs FDS7066N3 |
FDS7066N3 | 23000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, FLMP, SO-8 | Rochester Electronics LLC | SI4164DY-T1-GE3 vs FDS7066N3 |
PHK28NQ03LT,518 | N-channel TrenchMOS logic level FET SOIC 8-Pin | NXP Semiconductors | SI4164DY-T1-GE3 vs PHK28NQ03LT,518 |
FDS6699S | N-Channel PowerTrench® SyncFET™, 30V, 21A, 3.6mΩ, 2500-REEL | onsemi | SI4164DY-T1-GE3 vs FDS6699S |
PHK28NQ03LT | Small Signal Field-Effect Transistor | Nexperia | SI4164DY-T1-GE3 vs PHK28NQ03LT |