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Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4178DY-T1-GE3CT-ND
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DigiKey | MOSFET N-CH 30V 12A 8SO Min Qty: 1 Lead time: 22 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
3487 In Stock |
|
$0.2025 / $1.0000 | Buy Now |
DISTI #
70459530
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RS | SI4178DY-T1-GE3 N-channel MOSFET Transistor, 12 A, 30 V, 8-Pin SOIC | Siliconix / Vishay SI4178DY-T1-GE3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
|
$0.5100 / $0.6000 | RFQ |
|
New Advantage Corporation | N-Channel 30 V 0.021 Ohm 5 W Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant Min Qty: 1 Package Multiple: 2500 | 120000 |
|
$0.1822 | Buy Now |
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SI4178DY-T1-GE3
Vishay Siliconix
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Datasheet
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SI4178DY-T1-GE3
Vishay Siliconix
Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOIC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Avalanche Energy Rating (Eas) | 5 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 12 A | |
Drain-source On Resistance-Max | 0.021 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 56 pF | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 5 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Reference Standard | IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 35 ns | |
Turn-on Time-Max (ton) | 55 ns |