Part Details for SI4386DY-T1-E3 by Vishay Intertechnologies
Overview of SI4386DY-T1-E3 by Vishay Intertechnologies
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Available Datasheets
Part # | Manufacturer | Description | Datasheet |
---|---|---|---|
FIDO5100BBCZ | Analog Devices | REM Switch | |
FIDO5200CBCZ | Analog Devices | REM Switch with EtherCAT | |
ADIN1300CCPZ | Analog Devices | Industrial Ethernet Gigabit PH |
Price & Stock for SI4386DY-T1-E3
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
75M5463
|
Newark | N Channel Mosfet, 30V, 16A, Soic, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Vishay SI4386DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.6790 / $0.8110 | Buy Now |
DISTI #
85W2146
|
Newark | Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:16A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V, Power Dissipation:3.1W, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4386DY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$0.9860 | Buy Now |
DISTI #
SI4386DY-T1-E3
|
Avnet Americas | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4386DY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Container: Reel | 0 |
|
$0.5541 | Buy Now |
DISTI #
781-SI4386DY-T1-E3
|
Mouser Electronics | MOSFETs 30V 16A 3.1W 7.0mohm @ 10V RoHS: Compliant | 2487 |
|
$0.6460 / $1.3400 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.6500 / $0.6800 | Buy Now |
|
Future Electronics | Single N-Channel 30 V 7 mOhms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks Container: Reel | 0Reel |
|
$0.6500 / $0.6800 | Buy Now |
DISTI #
82700971
|
Verical | Trans MOSFET N-CH 30V 11A 8-Pin SOIC N T/R RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Date Code: 2317 | Americas - 2500 |
|
$0.5416 | Buy Now |
|
Bristol Electronics | 1353 |
|
RFQ | ||
|
Quest Components | 1082 |
|
$0.9158 / $2.2200 | Buy Now | |
DISTI #
SI4386DY-T1-E3
|
TTI | MOSFETs 30V 16A 3.1W 7.0mohm @ 10V pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
|
$0.6630 / $0.7030 | Buy Now |
Part Details for SI4386DY-T1-E3
SI4386DY-T1-E3 CAD Models
SI4386DY-T1-E3 Part Data Attributes
|
SI4386DY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4386DY-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Not Recommended | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 11 A | |
Drain-source On Resistance-Max | 0.007 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 3.1 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |