Datasheets
SI4410BDY-T1-GE3 by:

Power Field-Effect Transistor, 14A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8

Part Details for SI4410BDY-T1-GE3 by Vishay Intertechnologies

Overview of SI4410BDY-T1-GE3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for SI4410BDY-T1-GE3

Part # Distributor Description Stock Price Buy
Bristol Electronics   1915
RFQ
Quest Components   1532
  • 1 $1.0705
  • 94 $0.5353
  • 375 $0.4282
$0.4282 / $1.0705 Buy Now
Chip1Cloud MOSFET N-CH 30V 7.5A 8-SOIC 41300
RFQ

Part Details for SI4410BDY-T1-GE3

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SI4410BDY-T1-GE3 Part Data Attributes:

SI4410BDY-T1-GE3 Vishay Intertechnologies
Buy Now Datasheet
Compare Parts:
SI4410BDY-T1-GE3 Vishay Intertechnologies Power Field-Effect Transistor, 14A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description MS-012, SOIC, SOP-8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer Vishay
Avalanche Energy Rating (Eas) 11.25 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 14 A
Drain-source On Resistance-Max 0.014 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 72 pF
JEDEC-95 Code MS-012AA
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 5 W
Pulsed Drain Current-Max (IDM) 32 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 44 ns
Turn-on Time-Max (ton) 36 ns

Alternate Parts for SI4410BDY-T1-GE3

This table gives cross-reference parts and alternative options found for SI4410BDY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4410BDY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4410BDY-T1 Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Intertechnologies SI4410BDY-T1-GE3 vs SI4410BDY-T1
SI4410BDY Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4410BDY-T1-GE3 vs SI4410BDY
SI4410BDY-T1-E3 Power Field-Effect Transistor, 14A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 Vishay Intertechnologies SI4410BDY-T1-GE3 vs SI4410BDY-T1-E3
SI4410BDY-T1-GE3 TRANSISTOR 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4410BDY-T1-GE3 vs SI4410BDY-T1-GE3
Part Number Description Manufacturer Compare
SI4410BDY-T1-GE3 TRANSISTOR 7500 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4410BDY-T1-GE3 vs SI4410BDY-T1-GE3
SI4410BDY Small Signal Field-Effect Transistor, 7.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4410BDY-T1-GE3 vs SI4410BDY
SI4490DY-T1-E3 Small Signal Field-Effect Transistor, 2.85A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Intertechnologies SI4410BDY-T1-GE3 vs SI4490DY-T1-E3
SI4410BDY-T1-E3 Power Field-Effect Transistor, 14A I(D), 30V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC, SOP-8 Vishay Intertechnologies SI4410BDY-T1-GE3 vs SI4410BDY-T1-E3
SI4490DY-T1-GE3 TRANSISTOR 2850 mA, 200 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix SI4410BDY-T1-GE3 vs SI4490DY-T1-GE3

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