Part Details for SI4410DY by Vishay Siliconix
Overview of SI4410DY by Vishay Siliconix
- Distributor Offerings: (11 listings)
- Number of FFF Equivalents: (10 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4410DY
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 400 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, SO | 714 |
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$0.4623 / $1.1094 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 256 |
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$0.3357 / $1.1190 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 76 |
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$0.7122 / $1.1870 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 240 |
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$0.6250 / $1.2500 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 307 |
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$0.7396 / $1.8490 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 120 |
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$0.9245 / $1.8490 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 34 |
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$1.1094 / $1.8490 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, SO | 1777 |
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$0.6472 / $1.8490 | Buy Now |
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Velocity Electronics | Our Stock | 540 |
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RFQ |
Part Details for SI4410DY
SI4410DY CAD Models
SI4410DY Part Data Attributes:
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SI4410DY
Vishay Siliconix
Buy Now
Datasheet
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Compare Parts:
SI4410DY
Vishay Siliconix
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
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| Rohs Code | No | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | SILICONIX INC | |
| Part Package Code | SOT | |
| Pin Count | 8 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 10 A | |
| Drain-source On Resistance-Max | 0.0135 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e0 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | TIN LEAD | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4410DY
This table gives cross-reference parts and alternative options found for SI4410DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4410DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4410DY,518 | SI4410DY - N-channel TrenchMOS logic level FET@en-us SOIC 8-Pin | Nexperia | SI4410DY vs SI4410DY,518 |
| SI4410DY | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | SI4410DY vs SI4410DY |
| SI4410DY | TRANSISTOR 10000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal | NXP Semiconductors | SI4410DY vs SI4410DY |
| SI4410DY-T1 | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 | Vishay Siliconix | SI4410DY vs SI4410DY-T1 |
| SI4410DYL86Z | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4410DY vs SI4410DYL86Z |
| SI4410DYTR | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | International Rectifier | SI4410DY vs SI4410DYTR |
| SI4410DY-REVA | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4410DY vs SI4410DY-REVA |
| SI4410DYTRPBF | Power Field-Effect Transistor, 10A I(D), 30V, 0.0135ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, SOP-8 | Infineon Technologies AG | SI4410DY vs SI4410DYTRPBF |
| SI4410DY_NL | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 | Fairchild Semiconductor Corporation | SI4410DY vs SI4410DY_NL |
| SI4410DY-T1-REVA | Small Signal Field-Effect Transistor, 10A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 | Vishay Siliconix | SI4410DY vs SI4410DY-T1-REVA |