Part Details for SI4430BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4430BDY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for SI4430BDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
84W7286
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Newark | Mosfet, N Channel, 30V, 0.0037Ohm, 14A, Soic-8, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:14A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Power Dissipation:1.6W Rohs Compliant: Yes |Vishay SI4430BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.8320 / $0.9950 | Buy Now |
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DISTI #
16P3737
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Newark | N Channel Mosfet, 30V, 20A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:20A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:20V, Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Vishay SI4430BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.3000 | Buy Now |
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DISTI #
SI4430BDY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4430BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.8775 / $1.1147 | Buy Now |
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DISTI #
781-SI4430BDY-T1-GE3
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Mouser Electronics | MOSFET 30V 20A 3.0W 4.5mohm @ 10V RoHS: Compliant | 2438 |
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$0.7800 / $1.8600 | Buy Now |
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Future Electronics | Single N-Channel 30 V 0.006 Ohm 36 nC 1.6 W Silicon SMT Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 | 0 |
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$0.6650 | Buy Now |
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DISTI #
SI4430BDY-T1-GE3
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TTI | MOSFET 30V 20A 3.0W 4.5mohm @ 10V RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 5000 In Stock |
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$1.0100 / $1.0300 | Buy Now |
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DISTI #
SI4430BDY-T1-GE3
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Avnet Americas | Trans MOSFET N-CH 30V 14A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4430BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.8775 / $1.1147 | Buy Now |
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DISTI #
1771925
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element14 Asia-Pacific | N CHANNEL MOSFET, 30V, 20A, SOIC RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$0.8672 / $1.9717 | Buy Now |
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DISTI #
2335058
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Farnell | MOSFET, N CH, 30V, 0.0037OHM, 14A, SOIC RoHS: Compliant Min Qty: 2500 Lead time: 20 Weeks, 1 Days Container: Reel | 0 |
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$0.9078 / $1.5131 | Buy Now |
Part Details for SI4430BDY-T1-GE3
SI4430BDY-T1-GE3 CAD Models
SI4430BDY-T1-GE3 Part Data Attributes:
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SI4430BDY-T1-GE3
Vishay Intertechnologies
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Datasheet
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Compare Parts:
SI4430BDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 14A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 14 A | |
| Drain-source On Resistance-Max | 0.0045 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 3 W | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Element Material | SILICON |