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SI4435DY by:

Transistor,

Part Details for SI4435DY by Vishay Siliconix

Overview of SI4435DY by Vishay Siliconix

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Price & Stock for SI4435DY

Part # Distributor Description Stock Price Buy
Bristol Electronics   5512
RFQ
Quest Components MOSFET Transistor, P-Channel, SO 21
  • 1 $0.8160
  • 7 $0.6800
$0.6800 / $0.8160 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1994
  • 1 $1.3000
  • 309 $0.5200
  • 1,539 $0.4550
$0.4550 / $1.3000 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 80
  • 1 $1.3600
  • 19 $0.8160
  • 75 $0.6800
$0.6800 / $1.3600 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1075
  • 1 $2.0440
  • 197 $0.8176
  • 979 $0.7154
$0.7154 / $2.0440 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 1991
  • 1 $1.3600
  • 295 $0.5440
  • 1,472 $0.4760
$0.4760 / $1.3600 Buy Now
Quest Components MOSFET Transistor, P-Channel, SO 249
  • 1 $1.3600
  • 19 $0.8160
  • 75 $0.6800
$0.6800 / $1.3600 Buy Now
NexGen Digital   2964
RFQ
Velocity Electronics Our Stock 1643
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 35
  • 1 $0.7700
  • 100 $0.5800
  • 1,000 $0.5000
$0.5000 / $0.7700 Buy Now

Part Details for SI4435DY

SI4435DY CAD Models

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SI4435DY Part Data Attributes:

SI4435DY Vishay Siliconix
Buy Now Datasheet
Compare Parts:
SI4435DY Vishay Siliconix Transistor,
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY SILICONIX
Part Package Code SOT
Package Description SO-8
Pin Count 8
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Vishay
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.035 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type P-CHANNEL
Power Dissipation Ambient-Max 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Element Material SILICON

Alternate Parts for SI4435DY

This table gives cross-reference parts and alternative options found for SI4435DY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4435DY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI4435DY-T1-REVA Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435DY vs SI4435DY-T1-REVA
SI4435DY-T1-A-E3 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SO-8 Vishay Siliconix SI4435DY vs SI4435DY-T1-A-E3
SI4435DYS62Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4435DY vs SI4435DYS62Z
SI4435DY-REVA Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Siliconix SI4435DY vs SI4435DY-REVA
SI4435DY-T1 Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, Vishay Intertechnologies SI4435DY vs SI4435DY-T1
SI4435DY_NL Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4435DY vs SI4435DY_NL
SI4435DY 8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC SI4435DY vs SI4435DY
SI4435DY 30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ, 2500-REEL onsemi SI4435DY vs SI4435DY
Part Number Description Manufacturer Compare
SI4435DYS62Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4435DY vs SI4435DYS62Z
SI4835DYD84Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435DY vs SI4835DYD84Z
SI4435DY-T1-REVA Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Vishay Siliconix SI4435DY vs SI4435DY-T1-REVA
SI4435DDY-T1-E3 Small Signal Field-Effect Transistor, 8.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Vishay Siliconix SI4435DY vs SI4435DDY-T1-E3
SI4435DY-REVA Small Signal Field-Effect Transistor, 8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOP-8 Vishay Siliconix SI4435DY vs SI4435DY-REVA
SI4435DY_NL Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4435DY vs SI4435DY_NL
SI4835BDY-T1-E3 Small Signal Field-Effect Transistor, 7.4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 Vishay Siliconix SI4435DY vs SI4835BDY-T1-E3
SI4435DY 30V P-Channel PowerTrench® MOSFET -8.8A, 20mΩ, 2500-REEL onsemi SI4435DY vs SI4435DY
SI4435DY 8800mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 Rochester Electronics LLC SI4435DY vs SI4435DY
SI4835DYL86Z Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4435DY vs SI4835DYL86Z

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