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Part Details for SI4477DY-T1-GE3 by Vishay Intertechnologies
Overview of SI4477DY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (18 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Available)
- Number of Functional Equivalents: (1 option)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SI4477DY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
35R6238
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Newark | P Channel Mosfet, -20V, 26.6A, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:26.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Vishay SI4477DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2500 |
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$0.4950 | Buy Now |
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DISTI #
60AC3816
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Newark | Mosfet, p Ch,20V,26.6A,8-Soic, Transistor Polarity:P Channel, Continuous Drain Current Id:-26.6A, Drain Source Voltage Vds:-20V, On Resistance Rds(On):0.0051Ohm, Rds(On) Test Voltage Vgs:-4.5V, Threshold Voltage Vgs:-1.5V, Power Rohs Compliant: Yes |Vishay SI4477DY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 895 |
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$1.0700 / $1.5200 | Buy Now |
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DISTI #
15R5034
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Newark | P Channel Mosfet, -20V, 26.6A, Full Reel, Channel Type:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:26.6A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:1.5V Rohs Compliant: Yes |Vishay SI4477DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5590 / $0.6600 | Buy Now |
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DISTI #
SI4477DY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 20V 18A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4477DY-T1-GE3) RoHS: Not Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5670 / $0.7203 | Buy Now |
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DISTI #
781-SI4477DY-GE3
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Mouser Electronics | MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant | 2999 |
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$0.5250 / $1.4000 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.0062 Ω 190 nC Surface Mount Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5050 / $0.5250 | Buy Now |
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Future Electronics | Single P-Channel 20 V 0.0062 Ω 190 nC Surface Mount Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5050 / $0.5250 | Buy Now |
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DISTI #
78958718
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Verical | Trans MOSFET P-CH 20V 26.6A 8-Pin SOIC N T/R Min Qty: 102 Package Multiple: 1 | Americas - 2500 |
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$0.7021 / $0.8083 | Buy Now |
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Bristol Electronics | 1522 |
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RFQ | ||
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DISTI #
SI4477DY-T1-GE3
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TTI | MOSFET -20V Vds 12V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 7500 In Stock |
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$0.5250 / $0.6050 | Buy Now |
Part Details for SI4477DY-T1-GE3
SI4477DY-T1-GE3 CAD Models
SI4477DY-T1-GE3 Part Data Attributes:
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SI4477DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4477DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 26.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 26.6 A | |
| Drain-source On Resistance-Max | 0.0062 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 6.6 W | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for SI4477DY-T1-GE3
This table gives cross-reference parts and alternative options found for SI4477DY-T1-GE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4477DY-T1-GE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SI4477DY-T1-GE3 | Small Signal Field-Effect Transistor, 18A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8 | Vishay Siliconix | SI4477DY-T1-GE3 vs SI4477DY-T1-GE3 |