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Part Details for SI4483ADY-T1-GE3 by Vishay Intertechnologies
Overview of SI4483ADY-T1-GE3 by Vishay Intertechnologies
- Distributor Offerings: (15 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Available)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Renewable Energy
Automotive
Price & Stock for SI4483ADY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2656
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Newark | Mosfet Transistor, P Channel, -19.2 A, -30 V, 0.0127 Ohm, -4.5 V, -2.1 V Rohs Compliant: Yes |Vishay SI4483ADY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 30917 |
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$0.9060 / $1.3500 | Buy Now |
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DISTI #
85W3209
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Newark | Mosfet, P Channel, -30V, 0.0127Ohm, -19.2A, Soic-8, Transistor Polarity:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:19.2A, On Resistance Rds(On):0.0127Ohm, Transistor Mounting:Surface Mount, No. Of Pins:8Pinsrohs Compliant: Yes |Vishay SI4483ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$0.8220 | Buy Now |
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DISTI #
15R5037
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Newark | Mosfet Transistor, P Channel, -19.2 A, -30 V, 0.0127 Ohm, -4.5 V, -2.1 V Rohs Compliant: Yes |Vishay SI4483ADY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.4660 / $0.5500 | Buy Now |
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DISTI #
SI4483ADY-T1-GE3
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Avnet Americas | Trans MOSFET P-CH 30V 13.5A 8-Pin SOIC N T/R - Tape and Reel (Alt: SI4483ADY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.4725 / $0.6002 | Buy Now |
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DISTI #
781-SI4483ADY-GE3
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Mouser Electronics | MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant | 36084 |
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$0.4380 / $1.1700 | Buy Now |
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Future Electronics | P-CH MOSFET SO-8 30V 8.5MOHM @ 10V ESD PROTECTED RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4300 / $0.4500 | Buy Now |
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Future Electronics | P-CH MOSFET SO-8 30V 8.5MOHM @ 10V ESD PROTECTED RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.4300 / $0.4500 | Buy Now |
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Bristol Electronics | 46733 |
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RFQ | ||
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Quest Components | 2466 |
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$0.6076 / $1.7360 | Buy Now | |
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DISTI #
SI4483ADY-T1-GE3
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TTI | MOSFET -30V Vds 25V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 7500 In Stock |
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$0.4380 / $0.4650 | Buy Now |
Part Details for SI4483ADY-T1-GE3
SI4483ADY-T1-GE3 CAD Models
SI4483ADY-T1-GE3 Part Data Attributes:
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SI4483ADY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4483ADY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 19.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, MS-012, SOIC-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | MS-012, SOIC-8 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 19.2 A | |
| Drain-source On Resistance-Max | 0.0088 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | P-CHANNEL | |
| Power Dissipation-Max (Abs) | 5.9 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |