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Transistors / Power Field-Effect Transistors / SI4484EY
Datasheets
SI4484EY by:

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

Part Details for SI4484EY by Vishay Siliconix

Overview of SI4484EY by Vishay Siliconix

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Part Details for SI4484EY

SI4484EY CAD Models

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SI4484EY Part Data Attributes

Parametric Data
SI4484EY Vishay Siliconix
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SI4484EY Vishay Siliconix Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code No
Part Life Cycle Code Transferred
Ihs Manufacturer SILICONIX INC
Part Package Code SOT
Package Description ,
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Samacsys Manufacturer Vishay
Configuration SINGLE
Drain Current-Max (ID) 4.8 A
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e0
Number of Elements 1
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.8 W
Terminal Finish Tin/Lead (Sn/Pb)

Alternate Parts for SI4484EY

This table gives cross-reference parts and alternative options found for SI4484EY. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4484EY, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS3680 Small Signal Field-Effect Transistor, 5.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3680
FDS3680F011 Small Signal Field-Effect Transistor, 5.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3680F011
FDS3680S62Z Small Signal Field-Effect Transistor, 5.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3680S62Z
FDS3690F011 Small Signal Field-Effect Transistor, 4.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3690F011
FDS3690L86Z Small Signal Field-Effect Transistor, 4.2A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3690L86Z
FDS3670 Small Signal Field-Effect Transistor, 6.3A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation SI4484EY vs FDS3670
PSMN038-100K TRANSISTOR 6300 mA, 100 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA, PLASTIC, MS-012, SOP-8, FET General Purpose Small Signal NXP Semiconductors SI4484EY vs PSMN038-100K
PSMN038-100K Small Signal Field-Effect Transistor Nexperia SI4484EY vs PSMN038-100K
PSMN038-100K/T3 Small Signal Field-Effect Transistor Nexperia SI4484EY vs PSMN038-100K/T3
PSMN038-100K,518 N-channel TrenchMOS SiliconMAX standard level FET@en-us SOIC 8-Pin Nexperia SI4484EY vs PSMN038-100K,518

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