Parametric results for: SI4484EY under Power Field-Effect Transistors

All Filters Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount Configuration (2)

SINGLE 3 SINGLE WITH BUILT-IN DIODE 1

4 hits Apply

DS Breakdown Voltage-Min (1)

100 V 1

4 hits Apply

Drain Current-Max (ID) (1)

4.8 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

34 mΩ 1

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

R-PDSO-G8 1

4 hits Apply

e0 3

4 hits Apply

Manufacturer (2)

Vishay Intertechnologies 2 Vishay Siliconix 2

4 hits Apply

1 1

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

8 1

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 3

4 hits Apply

PLASTIC/EPOXY 1

4 hits Apply

RECTANGULAR 1

4 hits Apply

SMALL OUTLINE 1

4 hits Apply

Obsolete 3 Transferred 1

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

1.8 W 2 3.8 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 2

4 hits Apply