-
Part Symbol
-
Footprint
-
3D Model
Available Download Formats
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
Small Signal Field-Effect Transistor, 36A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
DISTI #
01AC4997
|
Newark | Mosfet, P-Ch, -30V, -36A, Soic, Transistor Polarity:P Channel, Continuous Drain Current Id:-36A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0027Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power Rohs Compliant: Yes |Vishay SI4497DY-T1-GE3 Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.2200 / $1.8500 | Buy Now |
DISTI #
04X9761
|
Newark | Mosfet, P Channel, -30V, -36A, Soic-8, Channel Type:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:36A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1V Rohs Compliant: Yes |Vishay SI4497DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
|
$1.1300 | Buy Now |
DISTI #
86R3888
|
Newark | Mosfet, P Channel, -30V, -36A, Soic-8, Full Reel, Transistor Polarity:P Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:36A, On Resistance Rds(On):0.0027Ohm, Transistor Mounting:Surface Mount, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4497DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$1.1600 | Buy Now |
DISTI #
05AC9498
|
Newark | Mosfet, P-Ch, -30V, -36A, Soic, Transistor Polarity:P Channel, Continuous Drain Current Id:-36A, Drain Source Voltage Vds:-30V, On Resistance Rds(On):0.0027Ohm, Rds(On) Test Voltage Vgs:-10V, Threshold Voltage Vgs:-2.5V, Power Rohs Compliant: Yes |Vishay SI4497DY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 1 Container: Reel | 0 |
|
$0.8420 / $0.9110 | Buy Now |
DISTI #
SI4497DY-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4497DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 2500 |
|
$0.7843 / $0.8634 | Buy Now |
DISTI #
781-SI4497DY-T1-GE3
|
Mouser Electronics | MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant | 21998 |
|
$0.7670 / $1.8000 | Buy Now |
|
Future Electronics | P-CH MOSFET SO-8 BWL 30V 3.3MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.7650 / $0.7950 | Buy Now |
|
Future Electronics | P-CH MOSFET SO-8 BWL 30V 3.3MOHM @ 10V RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
|
$0.7650 / $0.7950 | Buy Now |
DISTI #
SI4497DY-T1-GE3
|
TTI | MOSFET -30V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 17500 In Stock |
|
$0.7600 / $0.8000 | Buy Now |
DISTI #
SI4497DY-T1-GE3
|
Avnet Americas | Trans MOSFET P-CH 30V 24.8A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4497DY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 2500 |
|
$0.7843 / $0.8634 | Buy Now |
By downloading CAD models, you agree to our Terms & Conditions and Privacy Policy
|
SI4497DY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
|
Compare Parts:
SI4497DY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 36A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8
|
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | HALOGEN FREE AND ROHS COMPLIANT, MS-012, SOIC-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 36 A | |
Drain-source On Resistance-Max | 0.0033 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |