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Part Details for SI4816BDY-T1-GE3 by Vishay Intertechnologies
Overview of SI4816BDY-T1-GE3 by Vishay Intertechnologies
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Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for SI4816BDY-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
78Y6742
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Newark | Mosfet, Nn Ch, 30V, 8Soic, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:5.8A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.0155Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:3V, Power Dissipationrohs Compliant: Yes |Vishay SI4816BDY-T1-GE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2260 |
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$1.3000 / $1.8700 | Buy Now |
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DISTI #
15R5082
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Newark | Dual N Channel Mosfet, 30V, Soic, Full Reel, Channel Type:N Channel + Schottky, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:30V, Continuous Drain Current Id N Channel:5.8A, No. Of Pins:8Pins Rohs Compliant: Yes |Vishay SI4816BDY-T1-GE3 Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.6790 / $0.8110 | Buy Now |
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DISTI #
SI4816BDY-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 5.8A/8.2A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4816BDY-T1-GE3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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$0.5095 / $0.6472 | Buy Now |
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DISTI #
781-SI4816BDY-T1-GE3
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Mouser Electronics | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant | 15202 |
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$0.6460 / $1.5800 | Buy Now |
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DISTI #
E02:0323_01886801
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Arrow Electronics | Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks Date Code: 2413 | Europe - 2500 |
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$0.9608 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.0185/0.0115 Ω 10 nC Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$0.3450 / $0.3600 | Buy Now |
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Future Electronics | Dual N-Channel 30 V 0.0185/0.0115 Ω 10 nC Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.5900 / $0.6200 | Buy Now |
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DISTI #
79331313
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Verical | Trans MOSFET N-CH 30V 5.8A/8.2A 8-Pin SOIC N T/R Min Qty: 2500 Package Multiple: 2500 Date Code: 2413 | Americas - 2500 |
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$0.9584 | Buy Now |
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Bristol Electronics | 347 |
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RFQ | ||
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DISTI #
SI4816BDY-T1-GE3
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TTI | MOSFET 30V Vds 20V Vgs SO-8 RoHS: Compliant pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel |
Americas - 22500 In Stock |
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$0.4800 | Buy Now |
Part Details for SI4816BDY-T1-GE3
SI4816BDY-T1-GE3 CAD Models
SI4816BDY-T1-GE3 Part Data Attributes
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SI4816BDY-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4816BDY-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 5.8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Reach Compliance Code | compliant | |
| Factory Lead Time | 16 Weeks | |
| Samacsys Manufacturer | Vishay | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 5.8 A | |
| Drain-source On Resistance-Max | 0.0185 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | MS-012AA | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.4 W | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Element Material | SILICON |