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Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4900DY-T1-E3CT-ND
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DigiKey | MOSFET 2N-CH 60V 5.3A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
11058 In Stock |
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$0.4509 / $1.2000 | Buy Now |
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Quest Components | SMALL SIGNAL FIELD-EFFECT TRANSISTOR, 5.3A I(D), 60V, 2-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, MS-012AA | 1 |
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$1.3500 | Buy Now |
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SI4900DY-T1-E3
Vishay Siliconix
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Datasheet
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SI4900DY-T1-E3
Vishay Siliconix
Small Signal Field-Effect Transistor, 5.3A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, ROHS COMPLIANT, MS-012, SOIC-8
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Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, MS-012, SOIC-8 | |
Pin Count | 8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 5.3 A | |
Drain-source On Resistance-Max | 0.058 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |