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Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
SI4922BDY-T1-E3CT-ND
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DigiKey | MOSFET 2N-CH 30V 8A 8SOIC Min Qty: 1 Lead time: 11 Weeks Container: Cut Tape (CT), Digi-Reel®, Tape & Reel (TR) |
13299 In Stock |
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$0.6452 / $1.5400 | Buy Now |
DISTI #
70026232
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RS | MOSFET, Dual N-Channel 30-V (D-S) | Siliconix / Vishay SI4922BDY-T1-E3 RoHS: Not Compliant Min Qty: 2500 Package Multiple: 1 Container: Bulk | 0 |
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$1.0400 / $1.2300 | RFQ |
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SI4922BDY-T1-E3
Vishay Siliconix
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Datasheet
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SI4922BDY-T1-E3
Vishay Siliconix
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | VISHAY SILICONIX | |
Part Package Code | SOT | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Pin Count | 8 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 8 A | |
Drain-source On Resistance-Max | 0.024 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | PURE MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for SI4922BDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4922BDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
SI6926ADQ-T1-E3 | TRANSISTOR 4100 mA, 20 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSSOP-8, FET General Purpose Small Signal | Vishay Siliconix | SI4922BDY-T1-E3 vs SI6926ADQ-T1-E3 |
LS5909 | Small Signal Field-Effect Transistor, | Linear Integrated Systems | SI4922BDY-T1-E3 vs LS5909 |
FDC636P | 2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | SI4922BDY-T1-E3 vs FDC636P |
SVN66AK | Small Signal Field-Effect Transistor, N-Channel, Silicon, Metal-oxide Semiconductor FET, DIE | Solitron Devices Inc | SI4922BDY-T1-E3 vs SVN66AK |
BSD840NL6327 | Small Signal Field-Effect Transistor, 0.88A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC PACKAGE-6 | Infineon Technologies AG | SI4922BDY-T1-E3 vs BSD840NL6327 |
FDS6910 | 7500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SO-8 | Rochester Electronics LLC | SI4922BDY-T1-E3 vs FDS6910 |
2N5909 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78, | Solitron Devices Inc | SI4922BDY-T1-E3 vs 2N5909 |
SDF509 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | SI4922BDY-T1-E3 vs SDF509 |
SI3441BDV-T1-E3 | Small Signal Field-Effect Transistor, 2.45A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSOP-6 | Vishay Intertechnologies | SI4922BDY-T1-E3 vs SI3441BDV-T1-E3 |
TPC6007-H | TRANSISTOR 5000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, THIN, 2-3T1A, 6 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | SI4922BDY-T1-E3 vs TPC6007-H |