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Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
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Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
97W2665
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Newark | Dual Mosfet, Dual P Channel, -4.9 A, -20 V, 0.025 Ohm, -2.5 V, -1.4 V Rohs Compliant: Yes |Vishay SI4963BDY-T1-E3 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.9190 / $1.5900 | Buy Now |
DISTI #
69W7205
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Newark | Mosfet, P Channel, -20V, -4.9A, Soic-8, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:4.9A, On Resistance Rds(On):0.04Ohm, Transistor Mounting:Surface Mount, Rds(On) Test Voltage Vgs:2.5V Rohs Compliant: Yes |Vishay SI4963BDY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 0 |
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$1.1900 | Buy Now |
DISTI #
57J5690
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Newark | Dual P Channel Mosfet, -20V, Soic, Full Reel, Transistor Polarity:P Channel, Drain Source Voltage Vds:20V, Continuous Drain Current Id:6.5A, On Resistance Rds(On):0.025Ohm, Transistor Mounting:Surface Mount, Power Dissipation Pd:1.1Wrohs Compliant: Yes |Vishay SI4963BDY-T1-E3 RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.7430 / $0.8800 | Buy Now |
DISTI #
SI4963BDY-T1-E3
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Avnet Americas | Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R - Tape and Reel (Alt: SI4963BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0 |
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$0.6534 | Buy Now |
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Future Electronics | Dual P-Channel 20 V 32 mOhms Surface Mount Power Mosfet - SOIC-8 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 2500Reel |
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$0.7200 / $0.7500 | Buy Now |
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Bristol Electronics | 2480 |
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RFQ | ||
DISTI #
SI4963BDY-T1-E3
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TTI | MOSFETs 20V 6.2A 2W pbFree: Pb-Free Min Qty: 2500 Package Multiple: 2500 Container: Reel | Americas - 0 |
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$0.6820 / $0.6960 | Buy Now |
DISTI #
SI4963BDY-T1-E3
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TME | Transistor: P-MOSFET x2, TrenchFET®, unipolar, -20V, -6.5A, 2W, SO8 Min Qty: 1 | 0 |
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$0.7500 / $1.3400 | RFQ |
DISTI #
SI4963BDY-T1-E3
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Avnet Asia | Transistor MOSFET Array Dual P-CH 20V 4.9A 8-Pin SOIC T/R (Alt: SI4963BDY-T1-E3) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 | 0 |
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RFQ | |
DISTI #
C1S803601433394
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Chip1Stop | MOSFET RoHS: Compliant pbFree: Yes Container: Cut Tape | 2435 |
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$0.4310 / $0.8570 | Buy Now |
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SI4963BDY-T1-E3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI4963BDY-T1-E3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.9A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8
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Rohs Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
Package Description | ROHS COMPLIANT, SOP-8 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | Vishay | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 4.9 A | |
Drain-source On Resistance-Max | 0.032 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | MS-012AA | |
JESD-30 Code | R-PDSO-G8 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 8 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.1 W | |
Pulsed Drain Current-Max (IDM) | 40 A | |
Qualification Status | Not Qualified | |
Reference Standard | IEC-61249-2-21 | |
Surface Mount | YES | |
Terminal Finish | Pure Matte Tin (Sn) | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Element Material | SILICON | |
Turn-off Time-Max (toff) | 205 ns | |
Turn-on Time-Max (ton) | 105 ns |
This table gives cross-reference parts and alternative options found for SI4963BDY-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI4963BDY-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NTMD6P02R2 | 4800mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MINIATURE, CASE 751-07, SOIC-8 | onsemi | SI4963BDY-T1-E3 vs NTMD6P02R2 |