Part Details for SI5908DC-T1-GE3 by Vishay Intertechnologies
Overview of SI5908DC-T1-GE3 by Vishay Intertechnologies
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- Number of FFF Equivalents:
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Applications
Energy and Power Systems
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Renewable Energy
Automotive
Price & Stock for SI5908DC-T1-GE3
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
86R3909
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Newark | Dual N-Channel 20-V (D-S) Mosfet |Vishay SI5908DC-T1-GE3 Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.5320 / $0.6280 | Buy Now |
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DISTI #
SI5908DC-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5908DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 3000 |
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$0.5160 / $0.5680 | Buy Now |
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DISTI #
SI5908DC-T1-GE3
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5908DC-T1-GE3) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Container: Reel | 0 |
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$0.5400 / $0.6680 | Buy Now |
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DISTI #
78-SI5908DC-T1-GE3
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Mouser Electronics | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant | 33549 |
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$0.5000 / $1.0900 | Buy Now |
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DISTI #
V72:2272_09216242
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Arrow Electronics | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R Min Qty: 1 Package Multiple: 1 Lead time: 9 Weeks Date Code: 2208 Container: Cut Strips | Americas - 20 |
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$0.5322 / $0.7830 | Buy Now |
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Future Electronics | DUAL N-CH 1206-8 CHIPFET 20V 40MOHM @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5000 / $0.5200 | Buy Now |
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Future Electronics | DUAL N-CH 1206-8 CHIPFET 20V 40MOHM @ 4.5V RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0Reel |
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$0.5000 / $0.5200 | Buy Now |
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DISTI #
62303255
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Verical | Trans MOSFET N-CH 20V 4.4A 8-Pin Chip FET T/R Min Qty: 12 Package Multiple: 1 Date Code: 2208 | Americas - 20 |
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$0.5322 / $0.6874 | Buy Now |
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DISTI #
SI5908DC-T1-GE3
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TTI | MOSFET 20V Vds 8V Vgs 1206-8 ChipFET RoHS: Compliant pbFree: Pb-Free Min Qty: 3000 Package Multiple: 3000 Container: Reel |
Americas - 30000 In Stock |
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$0.5000 / $0.5270 | Buy Now |
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DISTI #
SI5908DC-T1-GE3
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 4.4A 8-Pin Chip FET T/R - Tape and Reel (Alt: SI5908DC-T1-GE3) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 6 Weeks, 0 Days Container: Reel | 3000 |
|
$0.5160 / $0.5680 | Buy Now |
Part Details for SI5908DC-T1-GE3
SI5908DC-T1-GE3 CAD Models
SI5908DC-T1-GE3 Part Data Attributes
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SI5908DC-T1-GE3
Vishay Intertechnologies
Buy Now
Datasheet
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Compare Parts:
SI5908DC-T1-GE3
Vishay Intertechnologies
Small Signal Field-Effect Transistor, 4.4A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | VISHAY INTERTECHNOLOGY INC | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, 1206-8, CHIPFET-8 | |
| Reach Compliance Code | compliant | |
| Samacsys Manufacturer | Vishay | |
| Additional Feature | ULTRA LOW RESISTANCE | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 4.4 A | |
| Drain-source On Resistance-Max | 0.04 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F8 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.1 W | |
| Pulsed Drain Current-Max (IDM) | 20 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | PURE MATTE TIN | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |