Datasheets
SI6562DQ-T1-E3 by:

Small Signal Field-Effect Transistor, 0.0045A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8

Part Details for SI6562DQ-T1-E3 by Vishay Intertechnologies

Overview of SI6562DQ-T1-E3 by Vishay Intertechnologies

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Part Details for SI6562DQ-T1-E3

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SI6562DQ-T1-E3 Part Data Attributes

SI6562DQ-T1-E3 Vishay Intertechnologies
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SI6562DQ-T1-E3 Vishay Intertechnologies Small Signal Field-Effect Transistor, 0.0045A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer VISHAY INTERTECHNOLOGY INC
Package Description TSSOP-8
Reach Compliance Code compliant
Samacsys Manufacturer Vishay
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.0045 A
Drain-source On Resistance-Max 0.03 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL AND P-CHANNEL
Power Dissipation-Max (Abs) 1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Element Material SILICON

Alternate Parts for SI6562DQ-T1-E3

This table gives cross-reference parts and alternative options found for SI6562DQ-T1-E3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of SI6562DQ-T1-E3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
SI6562DQ-T1 Small Signal Field-Effect Transistor, 0.0045A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Siliconix SI6562DQ-T1-E3 vs SI6562DQ-T1
Part Number Description Manufacturer Compare
SI6562CDQ-T1-GE3 Small Signal Field-Effect Transistor, 4.2A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8 Vishay Intertechnologies SI6562DQ-T1-E3 vs SI6562CDQ-T1-GE3
SI6562CDQ-T1-GE3 TRANSISTOR 4200 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, TSSOP-8, FET General Purpose Small Signal Vishay Siliconix SI6562DQ-T1-E3 vs SI6562CDQ-T1-GE3
SI6562DQ-T1 Small Signal Field-Effect Transistor, 0.0045A I(D), 20V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Vishay Siliconix SI6562DQ-T1-E3 vs SI6562DQ-T1

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